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隔離式閘極驅動器

UCC21222

現行

具有停用針腳、可編程失效時間和 8V UVLO 的 3.0kVrms、4A/6A 雙通道隔離式閘極驅動器

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最新 UCC21330 現行 具啟用邏輯與可編程失效時間的 3kVRMS 4A/6A 雙通道隔離式閘極驅動器 Improved CMTI, faster VDD startup

UCC21222

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 2 Isolation rating Basic Withstand isolation voltage (VISO) (Vrms) 3000 Working isolation voltage (VIOWM) (Vrms) 990 Transient isolation voltage (VIOTM) (VPK) 4242 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 6 Features Disable, Programmable dead time Output VCC/VDD (max) (V) 18 Output VCC/VDD (min) (V) 9.2 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.028 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 990 Rise time (ns) 5 Fall time (ns) 6 Undervoltage lockout (typ) (V) 8
Number of channels 2 Isolation rating Basic Withstand isolation voltage (VISO) (Vrms) 3000 Working isolation voltage (VIOWM) (Vrms) 990 Transient isolation voltage (VIOTM) (VPK) 4242 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 6 Features Disable, Programmable dead time Output VCC/VDD (max) (V) 18 Output VCC/VDD (min) (V) 9.2 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.028 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 990 Rise time (ns) 5 Fall time (ns) 6 Undervoltage lockout (typ) (V) 8
SOIC (D) 16 59.4 mm² 9.9 x 6
  • Resistor-programmable dead time
  • Universal: dual low-side, dual high-side or half-bridge driver
  • 4A peak source, 6A peak sink output
  • 3V to 5.5V input VCCI range
  • Up to 18V VDD output drive supply
    • 8V VDD UVLO
  • Switching parameters:
    • 28ns typical propagation delay
    • 10ns minimum pulse width
    • 5ns maximum delay matching
    • 5.5ns maximum pulse-width distortion
  • TTL and CMOS compatible inputs
  • Integrated deglitch filter
  • I/Os withstand –2V for 200ns
  • Common-mode transient immunity (CMTI) greater than 100V/ns
  • Isolation barrier life >40 Years
  • Surge immunity up to 7800VPK
  • Narrow body SOIC-16 (D) package
  • Safety-related certifications (planned):
    • 4242VPK isolation per DIN V VDE V 0884-11:2017-01 and DIN EN 61010-1
    • 3000VRMS isolation for 1 minute per UL 1577
    • CSA certification per IEC 60950-1, IEC 62368-1 and IEC 61010-1 end equipment standards
    • CQC Certification per GB4943.1-2011
  • Create a Custom Design Using the UCC21222 With the WEBENCH® Power Designer
  • Resistor-programmable dead time
  • Universal: dual low-side, dual high-side or half-bridge driver
  • 4A peak source, 6A peak sink output
  • 3V to 5.5V input VCCI range
  • Up to 18V VDD output drive supply
    • 8V VDD UVLO
  • Switching parameters:
    • 28ns typical propagation delay
    • 10ns minimum pulse width
    • 5ns maximum delay matching
    • 5.5ns maximum pulse-width distortion
  • TTL and CMOS compatible inputs
  • Integrated deglitch filter
  • I/Os withstand –2V for 200ns
  • Common-mode transient immunity (CMTI) greater than 100V/ns
  • Isolation barrier life >40 Years
  • Surge immunity up to 7800VPK
  • Narrow body SOIC-16 (D) package
  • Safety-related certifications (planned):
    • 4242VPK isolation per DIN V VDE V 0884-11:2017-01 and DIN EN 61010-1
    • 3000VRMS isolation for 1 minute per UL 1577
    • CSA certification per IEC 60950-1, IEC 62368-1 and IEC 61010-1 end equipment standards
    • CQC Certification per GB4943.1-2011
  • Create a Custom Design Using the UCC21222 With the WEBENCH® Power Designer

The UCC21222 device is an isolated dual channel gate driver with programmable dead time. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, IGBT, and GaN transistors.

The device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. A 5ns delay matching performance allows two outputs to be paralleled, doubling the drive strength for heavy load conditions without risk of internal shoot-through.

The input side is isolated from the two output drivers by a 3.0kVRMS isolation barrier, with a minimum of 100V/ns common-mode transient immunity (CMTI).

Resistor programmable dead time gives the capability to adjust dead time for system constraints to improve efficiency and prevent output overlap. Other protection features include a disable feature to shut down both outputs simultaneously when DIS is set high, an integrated deglitch filter that rejects input transients shorter than 5ns, and negative voltage handling for up to –2V spikes for 200ns on input and output pins. All supplies have UVLO protection.

The UCC21222 device is an isolated dual channel gate driver with programmable dead time. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, IGBT, and GaN transistors.

The device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. A 5ns delay matching performance allows two outputs to be paralleled, doubling the drive strength for heavy load conditions without risk of internal shoot-through.

The input side is isolated from the two output drivers by a 3.0kVRMS isolation barrier, with a minimum of 100V/ns common-mode transient immunity (CMTI).

Resistor programmable dead time gives the capability to adjust dead time for system constraints to improve efficiency and prevent output overlap. Other protection features include a disable feature to shut down both outputs simultaneously when DIS is set high, an integrated deglitch filter that rejects input transients shorter than 5ns, and negative voltage handling for up to –2V spikes for 200ns on input and output pins. All supplies have UVLO protection.
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類型 標題 日期
* Data sheet UCC21222 4A, 6A, 3.0kVRMS Isolated Dual-Channel Gate Driver with Dead Time datasheet (Rev. B) PDF | HTML 2024年 2月 5日
Certificate VDE Certificate for Basic Isolation for DIN EN IEC 60747-17 (Rev. W) 2024年 1月 31日
Certificate UCC21220 CQC Certificate of Product Certification 2023年 8月 16日
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 2021年 12月 16日
Certificate FPPT2 - Nonoptical Isolating Devices UL 1577 Certificate of Compliance 2021年 10月 26日
Test report Peak Efficiency at 99%, 585-W High-Voltage Buck Reference Design 2020年 4月 24日
Application brief External Gate Resistor Selection Guide (Rev. A) 2020年 2月 28日
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020年 2月 28日
Certificate UL Certification E181974 Vol 4. Sec 9 (Rev. A) 2019年 7月 22日
User guide Gate Drive Voltage vs. Efficiency 2019年 4月 25日
Application brief How to Drive High Voltage GaN FETs with UCC21220A 2019年 3月 6日
White paper Impact of an isolated gate driver (Rev. A) 2019年 2月 20日
Application note Common Mode Transient Immunity (CMTI) for UCC2122x Isolated Gate Drivers 2018年 7月 19日
White paper Demystifying high-voltage power electronics for solar inverters 2018年 6月 6日
Application note Solar Inverter Layout Considerations for UCC21220 2018年 6月 6日
Technical article Boosting efficiency for your solar inverter designs PDF | HTML 2018年 5月 24日

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