UCC21710
- 5.7-kV RMS single channel isolated gate driver
- Drives SiC MOSFETs and IGBTs up to 2121V pk
- 33-V maximum output drive voltage (VDD-VEE)
- ±10-A drive strength and split output
- 150-V/ns minimum CMTI
- 4-A internal active Miller clamp
- 400-mA soft turn-off under fault condition
- Isolated analog sensor with PWM output for
- Temperature sensing with NTC, PTC or thermal diode
- High voltage DC-Link or phase voltage
- Alarm FLT on over current and reset from RST/EN
- Fast enable/disable response on RST/EN
- Rejects <40-ns noise transient and pulses on input pins
- 12-V VDD UVLO with power good on RDY
- Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
- 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
- SOIC-16 DW package with creepage and clearance distance > 8 mm
- Operating junction temperature –40°C to 150°C
- Safety-related certifications:
- Reinforced insulation per DIN EN IEC 60747-17(VDE 0884-17)
- UL 1577 component recognition program
The UCC21710 is a galvanically isolated single channel gate driver designed to drive up to 1700V SiC MOSFETs and IGBTs. It features advanced integrated protection, best-in-class dynamic performance, and robustness. UCC21710 has up to ±10-A peak source and sink current.
The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage with longer than 40 years isolation barrier life, 12.8-kV PK surge immunity, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).
The UCC21710 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.
技術文件
設計與開發
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UCC21710QDWEVM-025 — 適用於 SiC 和 IGBT 電晶體和電源模組的驅動和保護評估板
UCC21710QDWEVM-054 — 適用 Wolfspeed® 1200-V SiC 平台的 UCC21710 評估模組
UCC21710QDWEVM-054 是精巧型半橋閘極驅動器評估模組,由兩個單通道及隔離式閘極驅動器組成。此評估模組可針對數種不同 Wolfspeed® 碳化矽 (SiC) MOSFET 模組和離散式 SiC MOSFET,以及具備類似接腳配置的其他絕緣柵極雙極電晶體 (IGBT) 或 SiC MOSFET 模組,提供驅動所需的供應電壓、驅動、保護與監控功能。
PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
TIDA-01606 — 10-kW、雙向三相三級 (T 型) 逆變器和 PFC 參考設計
PMP23223 — 配備偏壓電源的智慧型隔離式閘極驅動器參考設計
UCC14240-Q1、UCC14141-Q1 和 UCC14341-Q1 皆屬於整合式偏壓電源的直接投入使用的替代產品,每個元件都具備不同的目標輸入電壓和輸出功率。
UCC14xxx-Q1 資訊:
- UCC14240-Q1
- 隔離:基本
- 輸入電壓 (V):24 (21 至 27)
- 輸出電壓 (V):25 (18 至 25)
- 功率輸出 (...)
封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
SOIC (DW) | 16 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。