UCC27624-Q1
- Qualified for Automotive Applications
- AEC-Q100 Qualified
- Device Temperature Grade 1
- Device HBM ESD Classification Level H1C
- Device CDM ESD Classification Level C6
- Typical 5A peak source and sink drive current for each channel
- Input and enable pins capable of handling –10V
- Output capable of handling –2V transients
- Absolute maximum VDD voltage: 30V
- Wide VDD operating range from 4.5V to 26V with UVLO
- Hysteretic-logic thresholds for high noise immunity
- VDD independent input thresholds (TTL compatible)
- Fast propagation delays (17ns typical)
- Fast rise and fall times (6ns and 10ns typical)
- 1ns typical delay matching between the two channels
- Two channels can be paralleled for higher drive current
- SOIC8 and VSSOP8 PowerPAD™ package options
- Operating junction temperature range of –40°C to 150°C
The UCC27624-Q1 is a dual-channel, high-speed, low-side gate driver that effectively drives MOSFET, IGBT, SiC, and GaN power switches. UCC27624-Q1 has a typical peak drive strength of 5A, which reduces rise and fall times of the power switches, lowers switching losses, and increases efficiency. The device’s fast propagation delay (17ns typical) yields better power stage efficiency by improving the deadtime optimization, pulse width utilization, control loop response, and transient performance of the system.
UCC27624-Q1 can handle –10V at its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independently of main control logic. In the event of a system fault, the gate driver can quickly shut-off by pulling enable low. Many high-frequency switching power supplies exhibit noise at the gate of the power device, which can get injected into the output pin on the gate driver and can cause the driver to malfunction. The device’s transient reverse current and reverse voltage capability allow it to tolerate noise on the gate of the power device or pulse-transformer and avoid driver malfunction.
The UCC27624-Q1 also features undervoltage lockout (UVLO) for improved system robustness. When there is not enough bias voltage to fully enhance the power device, the gate driver output is held low by the strong internal pull down MOSFET.
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設計與開發
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UCC27624DGNEVM — 適用雙通道 30-V、5-A 高速低壓側閘極驅動器的 UCC27624 評估模組
UCC27624 評估模組 (EVM) 專為評估 30-V、5-A 單通道閘極驅動器而設計。此 EVM 的目標是依產品規格書參數評估驅動器 IC。驅動器 IC 可針對各種電容與電阻負載進行評估。EVM 可設定為平行處理驅動器 IC 通道,以獲得更高的閘極驅動器輸出電流。EVM 具備評估 TO-220 體積功率電晶體的佈建。
UCC27624EVM — UCC27624 評估模組雙通道 30-V、5-A 高速低壓側閘極驅動器
UCC27624 評估模組 (EVM) 專為評估 TI 的 30-V、5-A 單通道閘極驅動器而設計。此 EVM 的目標是依產品規格書參數評估驅動器 IC。驅動器 IC 可針對各種電容與電阻負載進行評估。EVM 可設定為平行處理驅動器 IC 通道,以獲得更高的閘極驅動器輸出電流。EVM 具備評估 TO-220 體積功率電晶體的佈建。
PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
HVSSOP (DGN) | 8 | Ultra Librarian |
SOIC (D) | 8 | Ultra Librarian |
WSON (DSD) | 8 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。