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UCC5350-Q1

現行

Automotive ±5A single-channel isolated gate driver with Miller clamp or split outputs for SiC/IGBT

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產品規格表

UCC5350-Q1

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 1 Isolation rating Basic, Reinforced Withstand isolation voltage (VISO) (Vrms) 3000, 5000 Working isolation voltage (VIOWM) (Vrms) 990, 2121 Transient isolation voltage (VIOTM) (VPK) 4242, 7000 TI functional safety category Functional Safety-Capable Power switch IGBT, MOSFET, SiCFET Peak output current (A) 10 Features Active miller clamp, Split output Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 9.5 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 15 Propagation delay time (µs) 0.065 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive, Catalog Bootstrap supply voltage (max) (V) 990 Rise time (ns) 10 Fall time (ns) 10 Undervoltage lockout (typ) (V) 8, 12
Number of channels 1 Isolation rating Basic, Reinforced Withstand isolation voltage (VISO) (Vrms) 3000, 5000 Working isolation voltage (VIOWM) (Vrms) 990, 2121 Transient isolation voltage (VIOTM) (VPK) 4242, 7000 TI functional safety category Functional Safety-Capable Power switch IGBT, MOSFET, SiCFET Peak output current (A) 10 Features Active miller clamp, Split output Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 9.5 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 15 Propagation delay time (µs) 0.065 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive, Catalog Bootstrap supply voltage (max) (V) 990 Rise time (ns) 10 Fall time (ns) 10 Undervoltage lockout (typ) (V) 8, 12
SOIC (D) 8 29.4 mm² 4.9 x 6 SOIC (DWV) 8 67.275 mm² 5.85 x 11.5
  • ±5A minimum peak current drive strength
  • ±10A typical peak current drive strength
  • 3V to 15V input supply voltage
  • Up to 33V driver supply voltage
    • 8V and 12V UVLO options
  • 100V/ns minimum CMTI
  • Negative 5V handling capability on input pins
  • 100ns (maximum) propagation delay and <25ns part-to-part skew
  • 8-pin DWV (8.5mm creepage) and D (4mm creepage) packages
  • Isolation barrier life > 40 Years
  • Safety-related certifications:
    • 5000VRMS DWV and 3000VRMS D isolation rating for 1 minute per UL 1577
  • CMOS inputs
  • Operating junction temperature: –40°C to +150°C
  • ±5A minimum peak current drive strength
  • ±10A typical peak current drive strength
  • 3V to 15V input supply voltage
  • Up to 33V driver supply voltage
    • 8V and 12V UVLO options
  • 100V/ns minimum CMTI
  • Negative 5V handling capability on input pins
  • 100ns (maximum) propagation delay and <25ns part-to-part skew
  • 8-pin DWV (8.5mm creepage) and D (4mm creepage) packages
  • Isolation barrier life > 40 Years
  • Safety-related certifications:
    • 5000VRMS DWV and 3000VRMS D isolation rating for 1 minute per UL 1577
  • CMOS inputs
  • Operating junction temperature: –40°C to +150°C

The UCC5350-Q1 is a single-channel, isolated gate driver with 5A source and 5A sink minimum peak current designed to drive MOSFETs, IGBTs, and SiC MOSFETs. The UCC5350-Q1 has the option for Miller clamp or Split Outputs. The CLAMP pin is used to connect the transistor gate to an internal FET besides the output to prevent false turn-on caused by Miller current. The split outputs option allows separate control of the rise and fall times of the gate voltage with OUTH and OUTL pins.

The UCC5350-Q1 is available in a 4mm SOIC-8 (D) or 8.5mm wide body SOIC-8 (DWV) package and can support isolation voltage up to 3kVRMS and 5kVRMS, respectively. The input side is isolated from the output side with SiO2 capacitive isolation technology with longer than 40 years isolation barrier lifetime. The UCC5350-Q1 is a good fit for driving IGBTs or MOSFETs in applications such as high-voltage traction inverters and on-board chargers.

Compared to an optocoupler, the UCC5350-Q1 device has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.

The UCC5350-Q1 is a single-channel, isolated gate driver with 5A source and 5A sink minimum peak current designed to drive MOSFETs, IGBTs, and SiC MOSFETs. The UCC5350-Q1 has the option for Miller clamp or Split Outputs. The CLAMP pin is used to connect the transistor gate to an internal FET besides the output to prevent false turn-on caused by Miller current. The split outputs option allows separate control of the rise and fall times of the gate voltage with OUTH and OUTL pins.

The UCC5350-Q1 is available in a 4mm SOIC-8 (D) or 8.5mm wide body SOIC-8 (DWV) package and can support isolation voltage up to 3kVRMS and 5kVRMS, respectively. The input side is isolated from the output side with SiO2 capacitive isolation technology with longer than 40 years isolation barrier lifetime. The UCC5350-Q1 is a good fit for driving IGBTs or MOSFETs in applications such as high-voltage traction inverters and on-board chargers.

Compared to an optocoupler, the UCC5350-Q1 device has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.
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類型 標題 日期
* Data sheet UCC5350-Q1 Single-Channel Isolated Gate Driver for SiC/IGBT and Automotive Applications datasheet (Rev. F) PDF | HTML 2024年 7月 18日
Application brief Does My Design Need a Miller Clamp? PDF | HTML 2024年 12月 11日
Functional safety information UCC5390-Q1 Functional Safety, FIT Rate, Failure Mode Distribution and Pin FMA PDF | HTML 2022年 3月 16日
Technical article Increasing power density with an integrated GaN solution PDF | HTML 2022年 3月 14日
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 2021年 12月 16日

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