Inicio Gestión de la energía Controladores de compuertas Drivers del lado de tierra
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Gestión de la energía
Controladores de compuertas
Drivers del lado de tierra

LM5110

ACTIVO

Controlador de puerta de doble canal de 5 A/3 A con UVLO de 4 V, toma de tierra de entrada dedicada

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UCC27624 ACTIVO Controlador de compuerta doble canal de 5A/5A automotriz con umbrales de bloqueo por subtensión ( Wide VDD and higher driver current

LM5110

ACTIVO
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Detalles del producto

Number of channels 2 Power switch MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features Negative Output Voltage Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (µs) 0.025 Input threshold TTL Channel input logic Combination, Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 224 Driver configuration Dual, Independent
Number of channels 2 Power switch MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features Negative Output Voltage Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (µs) 0.025 Input threshold TTL Channel input logic Combination, Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 224 Driver configuration Dual, Independent
SOIC (D) 8 29.4 mm² 4.9 x 6 WSON (DPR) 10 16 mm² 4 x 4
  • Independently Drives Two N-Channel MOSFETs
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 5A sink/3A Source Current Capability
  • Two Channels can be Connected in Parallel to Double the Drive Current
  • Independent Inputs (TTL Compatible)
  • Fast Propagation Times (25-ns Typical)
  • Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load)
  • Dedicated Input Ground Pin (IN_REF) for Split Supply or Single Supply Operation
  • Outputs Swing from VCC to VEE Which Can Be Negative Relative to Input Ground
  • Available in Dual Noninverting, Dual Inverting and Combination Configurations
  • Shutdown Input Provides Low Power Mode
  • Supply Rail Undervoltage Lockout Protection
  • Pin-Out Compatible With Industry Standard Gate Drivers
  • Packages:
    • SOIC-8
    • WSON-10 (4 mm × 4 mm)
  • Independently Drives Two N-Channel MOSFETs
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 5A sink/3A Source Current Capability
  • Two Channels can be Connected in Parallel to Double the Drive Current
  • Independent Inputs (TTL Compatible)
  • Fast Propagation Times (25-ns Typical)
  • Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load)
  • Dedicated Input Ground Pin (IN_REF) for Split Supply or Single Supply Operation
  • Outputs Swing from VCC to VEE Which Can Be Negative Relative to Input Ground
  • Available in Dual Noninverting, Dual Inverting and Combination Configurations
  • Shutdown Input Provides Low Power Mode
  • Supply Rail Undervoltage Lockout Protection
  • Pin-Out Compatible With Industry Standard Gate Drivers
  • Packages:
    • SOIC-8
    • WSON-10 (4 mm × 4 mm)

The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced WSON-10 packages.

The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced WSON-10 packages.
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UCC27524A ACTIVO Controlador de puerta de doble canal de 5 A/5 A con UVLO de 5 V, activación y manipulación de tensió This product has higher drive current with 5-A sink/source, as well as faster propagation delay (13-ns) , rise time (7-ns) and fall time (6-ns).

Documentación técnica

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* Data sheet LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability datasheet (Rev. B) PDF | HTML 05 nov 2012
Application note Why use a Gate Drive Transformer? PDF | HTML 04 mar 2024
Application note Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 22 ene 2024
Application note Static Magnet Power Supply Design for Magnetic Resonance Imaging Application PDF | HTML 22 ene 2024
Application note Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver PDF | HTML 10 nov 2021
Application brief External Gate Resistor Selection Guide (Rev. A) 28 feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 feb 2020
Application note Improving Efficiency of DC-DC Conversion through Layout 07 may 2019
Application brief How to overcome negative voltage transients on low-side gate drivers' inputs 18 ene 2019
Application brief High-Side Cutoff Switches for High-Power Automotive Applications (Rev. A) 26 nov 2018
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 oct 2018
Selection guide Power Management Guide 2018 (Rev. R) 25 jun 2018
Application brief Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole 16 mar 2018

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

UCC27423-4-5-Q1EVM — Módulo de evaluación (EVM) UCC2742xQ1 de controladores MOSFET dobles de lado bajo, alta velocidad y

The UCC2742xQ1 EVM is a high-speed dual MOSFET evaluation module that provides a test platform for a quick and easy startup of the UCC2742xQ1 driver. Powered by a single 4V to 15V external supply, and featuring a comprehensive set of test points and jumpers. All of the devices have separate input (...)
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Modelo de simulación

LM5110-1M PSpice Transient Model (Rev. A)

SNVM295A.ZIP (57 KB) - PSpice Model
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Modelo de simulación

LM5110-1M TINA-TI Transient Reference Design

SNVM406.TSC (135 KB) - TINA-TI Reference Design
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Modelo de simulación

LM5110-1M TINA-TI Transient Spice Model

SNVM407.ZIP (10 KB) - TINA-TI Spice Model
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Modelo de simulación

LM5110-2M PSpice Transient Model

SNVM308.ZIP (47 KB) - PSpice Model
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Modelo de simulación

LM5110-2M TINA-TI Transient Reference Design

SNVM408.TSC (135 KB) - TINA-TI Reference Design
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Modelo de simulación

LM5110-2M TINA-TI Transient Spice Model

SNVM409.ZIP (10 KB) - TINA-TI Spice Model
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Modelo de simulación

LM5110-3M PSpice Transient Model

SNVM309.ZIP (47 KB) - PSpice Model
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Modelo de simulación

LM5110-3M TINA-TI Transient Reference Design

SNVM412.TSC (136 KB) - TINA-TI Reference Design
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Modelo de simulación

LM5110-3M TINA-TI Transient Spice Model

SNVM413.ZIP (10 KB) - TINA-TI Spice Model
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Modelo de simulación

LM5110_1M Unencrypted PSpice Transient Model

SNVMAD0.ZIP (1 KB) - PSpice Model
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Modelo de simulación

LM5110_2M Unencrypted PSpice Transient Model

SNVMAC9.ZIP (1 KB) - PSpice Model
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Modelo de simulación

LM5110_3M Unencrypted PSpice Transient Model

SNVMAD1.ZIP (1 KB) - PSpice Model
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Herramienta de simulación

PSPICE-FOR-TI — PSpice® para herramienta de diseño y simulación de TI

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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Encapsulado Pines Símbolos CAD, huellas y modelos 3D
SOIC (D) 8 Ultra Librarian
WSON (DPR) 10 Ultra Librarian
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Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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