The UC1708 family of power drivers is made with a high-speed, high-voltage, Schottky process to interface control functions and high-power switching devices — particularly power MOSFETs. Operating over a 5 V to 35 V supply range, these devices contain two independent channels. The A and B inputs are compatible with TTL and CMOS logic families, but can withstand input voltages as high as VIN. Each output can source or sink up to 3 A as long as power dissipation limits are not exceeded.
Although each output can be activated independently with its own inputs, they can be forced low in common through the action of either a digital high signal at the Shutdown terminal or by forcing the Enable terminal low. The Shutdown terminal will only force the outputs low, it will not effect the behavior of the rest of the device. The Enable terminal effectively places the device in under-voltage lockout, reducing power consumption by as much as 90%. During under-voltage and disable (Enable terminal forced low) conditions, the outputs are held in a self-biasing, low-voltage, state.
The UC3708 and UC2708 are available in plastic 8-pin MINI DIP and 16-pin bat-wing DIP packages for commercial operation over a 0°C to 70°C temperature range and industrial temperature range of -25°C to 85°C respectively. For operation over a -55°C to 125°C temperature range, the UC1708 is available in hermetically sealed 8-pin MINI CDIP, 16 pin CDIP and 20 pin CLCC packages. Surface mount devices are also available.
| Tipo | Título | Fecha | ||
|---|---|---|---|---|
| * | Data sheet | Dual Non-Inverting Power Driver datasheet (Rev. C) | 25 sep 2007 | |
| Application note | Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs | PDF | HTML | 22 ene 2024 | |
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 28 feb 2020 | ||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 28 feb 2020 | ||
| Application brief | How to overcome negative voltage transients on low-side gate drivers' inputs | 18 ene 2019 | ||
| More literature | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 29 oct 2018 | ||
| Application note | DN-35 IGBT Drive Using MOSFET Gate Drivers (Rev. A) | 21 jun 2018 | ||
| Application note | U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching Characteristics | 05 sep 1999 | ||
| Application note | U-137 Practical Considerations in High Performance MOSFET, IGBT and MCT Gate | 05 sep 1999 |
Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.
| Encapsulado | Pines | Símbolos CAD, huellas y modelos 3D |
|---|---|---|
| PDIP (N) | 16 | Ultra Librarian |
| PDIP (P) | 8 | Ultra Librarian |
| SOIC (DW) | 16 | Ultra Librarian |
El contenido lo proporcionan “tal como está” TI y los colaboradores de la comunidad y no constituye especificaciones de TI. Consulte los términos de uso.
Si tiene preguntas sobre la calidad, el paquete o el pedido de productos de TI, consulte el soporte de TI.