TPSI2072-Q1
- Qualified for automotive applications
- AEC-Q100 grade 1: –40 to 125°C T A
- Integrated avalanche rated MOSFETs
- Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
- I AVA = 2-mA for 5-s pulses, 1-mA for 60-s pulses
- V HIPOT, 5-s = 4300-V with R series > 1.83-MΩ
- V HIPOT, 5-s = 2850-V with R series > 1.1-MΩ
- 600-V standoff voltage
- R ON = 65-Ω (T J = 25°C)
- I OFF = 1-µA at 500-V (T J = 105°C)
- Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
- Low primary side supply current
- 5-mA single channel, 9-mA two channel ON state current
- Functional Safety Capable
- Documentation available to aid in ISO 26262 and IEC 61508 system design
- Robust isolation barrier:
- > 26 year projected lifetime at 1000-V RMS / 1500-V DC working voltage
- Isolation rating, V ISO, up to 3750-V RMS / 5300-V DC
- SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
- Creepage and clearance ≥ 8-mm (primary-secondary)
- Creepage and clearance ≥ 3-mm (across switch terminals)
- Safety-related certifications
- (Planned) DIN VDE V 0884-11:2017-01
- (Planned) UL 1577 component recognition program
The TPSI2072-Q1 is a two channel isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2072-Q1 uses TIs high reliability capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply. The TPSI2072-Q1 improves system reliability as TIs capacitive isolation technology does not suffer from mechanical wearout or photo degradation failure modes common in mechanical relay and photo relay components.
The primary side of the device is powered by only 9 mA of input current and incorporates fail-safe EN1 and EN2 pins preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 4.5 V–20 V and the EN1 and EN2 pins of the device should be driven by a GPIO output with logic HI between 2.1 V–20 V. In other applications, the VDD, EN1, and EN2 pins could be driven together directly from the system supply or from a GPIO output.
Each channel on the secondary side consists of back-to-back MOSFETs with a standoff voltage of +/-600 V from SM to S1 and SM to S2. The TPSI2072-Q1 MOSFETs avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 2 mA without requiring any external components.
관심 가지실만한 유사 제품
다른 핀 출력을 지원하지만 비교 대상 장치와 동일한 기능
기술 자료
유형 | 직함 | 날짜 | ||
---|---|---|---|---|
* | Data sheet | TPSI2072-Q1 2-Channel 600-V, 50-mA, Automotive Isolated Switch with 2-mA Avalanche Rating for Insulation Monitoring and High Voltage Measurements datasheet | PDF | HTML | 2023/06/30 |
Functional safety information | TPSI2072-Q1 Functional Safety, FIT Rate, Failure Mode Distribution and Pin FMA | 2023/06/30 | ||
EVM User's guide | TPSI2072-Q1 EVM User's Guide | PDF | HTML | 2023/06/29 | |
Certificate | TPSI2072Q1EVM EU Declaration of Conformity (DoC) | 2023/06/27 | ||
Product overview | When to use SSR or Isolated Gate Driver | PDF | HTML | 2022/08/04 |
설계 및 개발
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TPSI2072Q1EVM — TPSI2072-Q1 2채널 600V 절연 스위치용 평가 모듈
PSPICE-FOR-TI — TI 설계 및 시뮬레이션 툴용 PSpice®
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패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
---|---|---|
SOIC (DWQ) | 11 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치
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