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隔離式閘極驅動器

UCC21732-Q1

現行

適用於 IGBT/SiCFET 且具有 2 段式關閉功能的車用 5.7-kVrms ±10A 單通道隔離式閘極驅動器

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產品規格表

UCC21732-Q1

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000, 8400 TI functional safety category Functional Safety Quality-Managed Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off, Two-level turn-off Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 28 Fall time (ns) 24 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000, 8400 TI functional safety category Functional Safety Quality-Managed Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off, Two-level turn-off Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 28 Fall time (ns) 24 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 5.7kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 3A
    • Device CDM ESD classification level C3
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33V maximum output drive voltage (VDD-VEE)
  • ±10A drive strength and split output
  • 150V/ns minimum CMTI
  • 270ns response time fast overcurrent protection
  • External active miller clamp
  • Internal 2-level turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40ns noise transient and pulse on input pins
  • 12V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5V
  • 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • 8000VPK VIOTM and 2121VPK VIORM Reinforced Isolation per DIN EN IEC 60747-17 (VDE 0884-17)
    • 5700VRMS isolation for 1 minute per UL1577
  • 5.7kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 3A
    • Device CDM ESD classification level C3
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33V maximum output drive voltage (VDD-VEE)
  • ±10A drive strength and split output
  • 150V/ns minimum CMTI
  • 270ns response time fast overcurrent protection
  • External active miller clamp
  • Internal 2-level turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40ns noise transient and pulse on input pins
  • 12V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5V
  • 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • 8000VPK VIOTM and 2121VPK VIORM Reinforced Isolation per DIN EN IEC 60747-17 (VDE 0884-17)
    • 5700VRMS isolation for 1 minute per UL1577

The UCC21732-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21732-Q1 has up to ±10A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , >150V/ns common mode noise immunity (CMTI).

The UCC21732-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

The UCC21732-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21732-Q1 has up to ±10A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , >150V/ns common mode noise immunity (CMTI).

The UCC21732-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.
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UCC21759-Q1 現行 適用於 IGBT/SiC 且具 DESAT 和內部鉗位的車用 3.0kVrms、± 10A、單通道絕緣式閘極驅動器 Basic isolation, internal Miller clamp, only soft turn-off, and DESAT protection

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類型 標題 日期
* Data sheet UCC21732-Q1 Automotive 10A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI datasheet (Rev. C) PDF | HTML 2024年 1月 18日
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 2024年 2月 29日
Application brief Understanding the Short Circuit Protection for Silicon Carbide MOSFETs (Rev. C) PDF | HTML 2023年 9月 8日
User guide UCC217xx and ISO5x5x Half-Bridge EVM User's Guide for Wolfspeed 1200-V SiC 2023年 9月 1日
Certificate UCC217xx/-Q1 CQC Certificate of Product Certification 2023年 6月 7日
Application note HEV/EV Traction Inverter Design Guide Using Isolated IGBT and SiC Gate Drivers (Rev. B) PDF | HTML 2022年 10月 21日
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 2021年 12月 16日
E-book E-book: An engineer’s guide to industrial robot designs 2020年 2月 12日
Application note Performance of the Analog PWM Channel in Smart Gate Drivers 2020年 1月 16日
Design guide SiC/IGBT Isolated Gate Driver Reference Design With Thermal Diode and Sensing 2019年 12月 18日
User guide UCC217xx Family Driving and Protecting SiC and IGBT Power Modules and Transistor (Rev. B) 2019年 9月 9日
Technical article Eight questions about monitoring and protection in hybrid and electric vehicles PDF | HTML 2019年 5月 22日
Application brief Why is high UVLO important for safe IGBT & SiC MOSFET power switch operation 2019年 1月 30日

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

UCC21732QDWEVM-025 — 適用於 SiC 和 IGBT 電晶體和電源模組的驅動和保護評估板

The UCC21732QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation (...)

使用指南: PDF
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模擬型號

UCC21732 PSpice Transient Model

SLUM663.ZIP (65 KB) - PSpice Model
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模擬型號

UCC21732 Unencrypted PSPICE Transient Model

SLUM717.ZIP (6 KB) - PSpice Model
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計算工具

SLUC695 — UCC217xx XL Calculator Tool

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產品
隔離式閘極驅動器
UCC21710-Q1 — 適用於 SiC/IGBT 且具過電流保護功能的車用 5.7kVrms 10A 單通道絕緣式閘極驅動器 UCC21732-Q1 — 適用於 IGBT/SiCFET 且具有 2 段式關閉功能的車用 5.7-kVrms ±10A 單通道隔離式閘極驅動器 UCC21736-Q1 — 適用於 IGBT/SiC 且具主動短路保護功能的車用 5.7kVrms、±10A 絕緣式單通道閘極驅動器 UCC21739-Q1 — 適用於 IGBT/SiC 且具絕緣式類比感測功能的車用 3kVrms、±10A 單通道絕緣式閘極驅動器 UCC21750 — 適用於 IGBT/SiCFET 且具 DESAT 和內部米勒鉗位的 5.7kVrms ± 10A、單通道絕緣式閘極驅動器 UCC21750-Q1 — 適用於 IGBT/SiC 且具有 DESAT 和內部鉗位的車用 5.7kVrms、±10A 單通道絕緣式閘極驅動器 UCC21759-Q1 — 適用於 IGBT/SiC 且具 DESAT 和內部鉗位的車用 3.0kVrms、± 10A、單通道絕緣式閘極驅動器
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模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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參考設計

PMP23223 — 配備偏壓電源的智慧型隔離式閘極驅動器參考設計

此參考設計展示 UCC21732 柵極驅動器與 UCC14xxx 系列偏壓電源的組合。此設計可用於驅動各種電源開關，其中包括直接連接至 Wolfspeed 碳化矽 (SiC) 場效應電晶體 (FET) 模組。此參考設計也可做為高側或低側驅動器，或是可以用電容模擬負載進行測試。

UCC14240-Q1、UCC14141-Q1 和 UCC14341-Q1 皆屬於整合式偏壓電源的直接投入使用的替代產品，每個元件都具備不同的目標輸入電壓和輸出功率。

UCC14xxx-Q1 資訊：

  • UCC14240-Q1
    • 隔離：基本
    • 輸入電壓 (V)：24 (21 至 27)
    • 輸出電壓 (V)：25 (18 至 25)
    • 功率輸出 (...)
Test report: PDF
參考設計

TIDA-020030 — SiC/IGBT 隔離式閘極驅動器參考設計，具備熱二極體與感測 FET

This reference design is an IGBT or SiC isolated gate driver power stage driving a IGBT module with advanced protection features. The design consists of a single phase power stage from a traction inverter supporting high level of safety features. The IGBT module has integrated thermal diode for (...)
Design guide: PDF
電路圖: PDF
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SOIC (DW) 16 Ultra Librarian
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