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LMG1210

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Halbbrücken-Gate-Treiber, 1,5 A, 3 A, 200 V, 5-V-UVLO und programmierbare Totzeit für GaNFET und MOS

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Datenblatt

LMG1210

AKTIV
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Produktdetails

Bootstrap supply voltage (max) (V) 300 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 6 Input supply voltage (max) (V) 18 Peak output current (A) 3 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Catalog Propagation delay time (µs) 0.01 Rise time (ns) 0.5 Fall time (ns) 0.5 Iq (mA) 0.3 Input threshold TTL Channel input logic TTL/PWM Features Dead time control, Internal LDO Driver configuration Half bridge
Bootstrap supply voltage (max) (V) 300 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 6 Input supply voltage (max) (V) 18 Peak output current (A) 3 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Catalog Propagation delay time (µs) 0.01 Rise time (ns) 0.5 Fall time (ns) 0.5 Iq (mA) 0.3 Input threshold TTL Channel input logic TTL/PWM Features Dead time control, Internal LDO Driver configuration Half bridge
WQFN (RVR) 19 12 mm² 4 x 3
  • Up to 50-MHz operation
  • 10-ns typical propagation delay
  • 3.4-ns high-side to low-side matching
  • Minimum pulse width of 4 ns
  • Two control input options
    • Single PWM input with adjustable dead time
    • Independent input mode
  • 1.5-A peak source and 3-A peak sink currents
  • External bootstrap diode for flexibility
  • Internal LDO for adaptability to voltage rails
  • High 300-V/ns CMTI
  • HO to LO capacitance less than 1 pF
  • UVLO and overtemperature protection
  • Low-inductance WQFN package
  • Up to 50-MHz operation
  • 10-ns typical propagation delay
  • 3.4-ns high-side to low-side matching
  • Minimum pulse width of 4 ns
  • Two control input options
    • Single PWM input with adjustable dead time
    • Independent input mode
  • 1.5-A peak source and 3-A peak sink currents
  • External bootstrap diode for flexibility
  • Internal LDO for adaptability to voltage rails
  • High 300-V/ns CMTI
  • HO to LO capacitance less than 1 pF
  • UVLO and overtemperature protection
  • Low-inductance WQFN package

The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency. This part also features an internal LDO which ensures a gate-drive voltage of 5-V regardless of supply voltage.

To enable best performance in a variety of applications, the LMG1210 allows the designer to choose the optimal bootstrap diode to charge the high-side bootstrap capacitor. An internal switch turns the bootstrap diode off when the low side is off, effectively preventing the high-side bootstrap from overcharging and minimizing the reverse recovery charge. Additional parasitic capacitance across the GaN FET is minimized to less than 1 pF to reduce additional switching losses.

The LMG1210 features two control input modes: Independent Input Mode (IIM) and PWM mode. In IIM each of the outputs is independently controlled by a dedicated input. In PWM mode the two complementary output signals are generated from a single input and the user can adjust the dead time from 0 to 20 ns for each edge. The LMG1210 operates over a wide temperature range from –40°C to 125°C and is offered in a low-inductance WQFN package.

The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency. This part also features an internal LDO which ensures a gate-drive voltage of 5-V regardless of supply voltage.

To enable best performance in a variety of applications, the LMG1210 allows the designer to choose the optimal bootstrap diode to charge the high-side bootstrap capacitor. An internal switch turns the bootstrap diode off when the low side is off, effectively preventing the high-side bootstrap from overcharging and minimizing the reverse recovery charge. Additional parasitic capacitance across the GaN FET is minimized to less than 1 pF to reduce additional switching losses.

The LMG1210 features two control input modes: Independent Input Mode (IIM) and PWM mode. In IIM each of the outputs is independently controlled by a dedicated input. In PWM mode the two complementary output signals are generated from a single input and the user can adjust the dead time from 0 to 20 ns for each edge. The LMG1210 operates over a wide temperature range from –40°C to 125°C and is offered in a low-inductance WQFN package.
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Technische Dokumentation

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Typ Titel Datum
* Data sheet LMG1210 200-V, 1.5-A, 3-A half-bridge MOSFET and GaN FET driver with adjustable dead time for applications up to 50 MHz datasheet (Rev. D) PDF | HTML 07 Feb 2019
Application note Implementing Bootstrap Overcharge Prevention in GaN Half-bridge Circuits PDF | HTML 15 Nov 2023
Application brief GaN Applications PDF | HTML 10 Aug 2022
Application brief GaN Driver Schematic and Layout Recommendations PDF | HTML 10 Aug 2022
Application brief Key Parameters and Driving Requirements of GaN FETs PDF | HTML 04 Aug 2022
Application brief Nomenclature, Types, and Structure of GaN Transistors PDF | HTML 04 Aug 2022
Application brief How GaN Enables More Efficient and Reduced Form Factor Power Supplies PDF | HTML 02 Aug 2022
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
Application note How to Optimize RF Amplifier Performance Using LMG1210 03 Okt 2019
Application brief Achieve Cooler Thermals and Loss of your GaN Half-Bridge with the LMG1210 23 Mai 2019
Application note GaN Gate Driver Layout Help 23 Mai 2019
Application note Get the Most Power from a Half-bridge with High-Frequency Controllable Precision 05 Dez 2018
Application note Optimizing efficiency through dead time control with the LMG1210 GaN driver (Rev. A) 27 Nov 2018
White paper Optimizing multi-megahertz GaN driver design white paper (Rev. A) 27 Nov 2018
Technical article The sound of GaN PDF | HTML 26 Jun 2018
Technical article GaN drivers – switching faster than today’s technology PDF | HTML 05 Mär 2018
EVM User's guide Using the LMG1210EVM-012 300 V Half-Bridge Driver for GaN 29 Jan 2018
White paper A comprehensive methodology to qualify the reliability of GaN products 02 Mär 2015

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Evaluierungsplatine

LMG1210EVM-012 — LMG1210 Halbbrücken-Evaluierungsmodul mit offenem Regelkreis

The LMG1210EVM-012 is designed to evaluate the LMG1210 Megahertz 200V half-bridge driver for GaN FETs. This EVM consists on two Gallium Nitride FETs configured in a half-bridge, driven by a single LMG1210. No controller is present on the board.
Benutzerhandbuch: PDF
Nicht verfügbar auf TI.com
Simulationsmodell

LMG1210 PSpice Transient Model (Rev. C)

SNOM615C.ZIP (22427 KB) - PSpice Model
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Simulationsmodell

LMG1210 TINA-TI Reference Design (Rev. C)

SNOM617C.TSC (610 KB) - TINA-TI Reference Design
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Simulationsmodell

LMG1210 Unencrypted PSPICE Transient Model

SNOM677.ZIP (7 KB) - PSpice Model
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CAD/CAE-Symbol

LMG1210 Altium Deisgn Files

SNOR026.ZIP (3265 KB)
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Berechnungstool

SNOR035 — LMG1210 Component Design Calculator and Schematic Review

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This reference design provides customers with a comparison study on the usage of GaN vs SI in power supply designs. This specific design uses TPS40400 controller to drive CSD87381 for the silicon power supply and LMG1210 with EPC2111 for the GaN power supply to provide 0.8V/10A. This design (...)
Test report: PDF
Schaltplan: PDF
Referenzdesigns

TIDA-01634 — Referenzdesign einer Multi-MHz-GaN-Leistungsstufe für Highspeed-DC/DC-Wandler

This reference design implements a multi-MHz power stage design based on the LMG1210 half-bridge GaN driver and GaN power High Electron Mobility Transistors (HEMTs). With highly efficient switches and flexible dead-time adjustment, this design can significantly improve power density while (...)
Design guide: PDF
Schaltplan: PDF
Gehäuse Pins CAD-Symbole, Footprints und 3D-Modelle
WQFN (RVR) 19 Ultra Librarian
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  • Materialinhalt
  • Qualifikationszusammenfassung
  • Kontinuierliches Zuverlässigkeitsmonitoring
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