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LMG1210

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Halbbrücken-Gate-Treiber, 1,5 A, 3 A, 200 V, 5-V-UVLO und programmierbare Totzeit für GaNFET und MOS

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Datenblatt

LMG1210

AKTIV
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Produktdetails

Bootstrap supply voltage (max) (V) 300 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 6 Input supply voltage (max) (V) 18 Peak output current (A) 3 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Catalog Propagation delay time (µs) 0.01 Rise time (ns) 0.5 Fall time (ns) 0.5 Iq (mA) 0.3 Input threshold TTL Channel input logic TTL/PWM Features Dead time control, Internal LDO Driver configuration Half bridge
Bootstrap supply voltage (max) (V) 300 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 6 Input supply voltage (max) (V) 18 Peak output current (A) 3 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Catalog Propagation delay time (µs) 0.01 Rise time (ns) 0.5 Fall time (ns) 0.5 Iq (mA) 0.3 Input threshold TTL Channel input logic TTL/PWM Features Dead time control, Internal LDO Driver configuration Half bridge
WQFN (RVR) 19 12 mm² 4 x 3
  • Up to 50-MHz operation
  • 10-ns typical propagation delay
  • 3.4-ns high-side to low-side matching
  • Minimum pulse width of 4 ns
  • Two control input options
    • Single PWM input with adjustable dead time
    • Independent input mode
  • 1.5-A peak source and 3-A peak sink currents
  • External bootstrap diode for flexibility
  • Internal LDO for adaptability to voltage rails
  • High 300-V/ns CMTI
  • HO to LO capacitance less than 1 pF
  • UVLO and overtemperature protection
  • Low-inductance WQFN package
  • Up to 50-MHz operation
  • 10-ns typical propagation delay
  • 3.4-ns high-side to low-side matching
  • Minimum pulse width of 4 ns
  • Two control input options
    • Single PWM input with adjustable dead time
    • Independent input mode
  • 1.5-A peak source and 3-A peak sink currents
  • External bootstrap diode for flexibility
  • Internal LDO for adaptability to voltage rails
  • High 300-V/ns CMTI
  • HO to LO capacitance less than 1 pF
  • UVLO and overtemperature protection
  • Low-inductance WQFN package

The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency. This part also features an internal LDO which ensures a gate-drive voltage of 5-V regardless of supply voltage.

To enable best performance in a variety of applications, the LMG1210 allows the designer to choose the optimal bootstrap diode to charge the high-side bootstrap capacitor. An internal switch turns the bootstrap diode off when the low side is off, effectively preventing the high-side bootstrap from overcharging and minimizing the reverse recovery charge. Additional parasitic capacitance across the GaN FET is minimized to less than 1 pF to reduce additional switching losses.

The LMG1210 features two control input modes: Independent Input Mode (IIM) and PWM mode. In IIM each of the outputs is independently controlled by a dedicated input. In PWM mode the two complementary output signals are generated from a single input and the user can adjust the dead time from 0 to 20 ns for each edge. The LMG1210 operates over a wide temperature range from –40°C to 125°C and is offered in a low-inductance WQFN package.

The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency. This part also features an internal LDO which ensures a gate-drive voltage of 5-V regardless of supply voltage.

To enable best performance in a variety of applications, the LMG1210 allows the designer to choose the optimal bootstrap diode to charge the high-side bootstrap capacitor. An internal switch turns the bootstrap diode off when the low side is off, effectively preventing the high-side bootstrap from overcharging and minimizing the reverse recovery charge. Additional parasitic capacitance across the GaN FET is minimized to less than 1 pF to reduce additional switching losses.

The LMG1210 features two control input modes: Independent Input Mode (IIM) and PWM mode. In IIM each of the outputs is independently controlled by a dedicated input. In PWM mode the two complementary output signals are generated from a single input and the user can adjust the dead time from 0 to 20 ns for each edge. The LMG1210 operates over a wide temperature range from –40°C to 125°C and is offered in a low-inductance WQFN package.
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Technische Dokumentation

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Typ Titel Datum
* Data sheet LMG1210 200-V, 1.5-A, 3-A half-bridge MOSFET and GaN FET driver with adjustable dead time for applications up to 50 MHz datasheet (Rev. D) PDF | HTML 07 Feb 2019
Application note Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 25 Mär 2024
Application note Implementing Bootstrap Overcharge Prevention in GaN Half-bridge Circuits PDF | HTML 15 Nov 2023
Application note Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 08 Sep 2023
Application brief GaN Applications PDF | HTML 10 Aug 2022
Application brief GaN Driver Schematic and Layout Recommendations PDF | HTML 10 Aug 2022
Application brief Key Parameters and Driving Requirements of GaN FETs PDF | HTML 04 Aug 2022
Application brief Nomenclature, Types, and Structure of GaN Transistors PDF | HTML 04 Aug 2022
Application brief How GaN Enables More Efficient and Reduced Form Factor Power Supplies PDF | HTML 02 Aug 2022
Application note Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 12 Mai 2020
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
Application note How to Optimize RF Amplifier Performance Using LMG1210 03 Okt 2019
Application brief Achieve Cooler Thermals and Loss of your GaN Half-Bridge with the LMG1210 23 Mai 2019
Application note GaN Gate Driver Layout Help 23 Mai 2019
Application note Get the Most Power from a Half-bridge with High-Frequency Controllable Precision 05 Dez 2018
Application note Optimizing efficiency through dead time control with the LMG1210 GaN driver (Rev. A) 27 Nov 2018
White paper Optimizing multi-megahertz GaN driver design white paper (Rev. A) 27 Nov 2018
Technical article The sound of GaN PDF | HTML 26 Jun 2018
Technical article GaN drivers – switching faster than today’s technology PDF | HTML 05 Mär 2018
EVM User's guide Using the LMG1210EVM-012 300 V Half-Bridge Driver for GaN 29 Jan 2018
White paper A comprehensive methodology to qualify the reliability of GaN products 02 Mär 2015

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Evaluierungsplatine

LMG1210EVM-012 — LMG1210 Halbbrücken-Evaluierungsmodul mit offenem Regelkreis

The LMG1210EVM-012 is designed to evaluate the LMG1210 Megahertz 200V half-bridge driver for GaN FETs. This EVM consists on two Gallium Nitride FETs configured in a half-bridge, driven by a single LMG1210. No controller is present on the board.
Benutzerhandbuch: PDF
Nicht verfügbar auf TI.com
Simulationsmodell

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SNOM617C.TSC (610 KB) - TINA-TI Reference Design
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LMG1210 Unencrypted PSPICE Transient Model

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CAD/CAE-Symbol

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SNOR026.ZIP (3265 KB)
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Berechnungstool

SNOR035 — LMG1210 Component Design Calculator and Schematic Review

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Referenzdesigns

TIDA-01634 — Referenzdesign einer Multi-MHz-GaN-Leistungsstufe für Highspeed-DC/DC-Wandler

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Schaltplan: PDF
Gehäuse Pins CAD-Symbole, Footprints und 3D-Modelle
WQFN (RVR) 19 Ultra Librarian
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  • Kontinuierliches Zuverlässigkeitsmonitoring
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