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UCC27532

AKTIV

Einkanal-Gate-Treiber für 2,5 A/5 A mit 8-V-UVLO, 35-V-VDD, CMOS-Eingängen und geteilten Ausgängen

Produktdetails

Number of channels 1 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 5 Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 32 Features Split Output Operating temperature range (°C) -40 to 140 Rise time (ns) 15 Fall time (ns) 7 Propagation delay time (µs) 0.017 Input threshold CMOS Channel input logic Non-Inverting, Single Input negative voltage (V) -5 Rating Catalog Undervoltage lockout (typ) (V) 8 Driver configuration Non-Inverting, Single
Number of channels 1 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 5 Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 32 Features Split Output Operating temperature range (°C) -40 to 140 Rise time (ns) 15 Fall time (ns) 7 Propagation delay time (µs) 0.017 Input threshold CMOS Channel input logic Non-Inverting, Single Input negative voltage (V) -5 Rating Catalog Undervoltage lockout (typ) (V) 8 Driver configuration Non-Inverting, Single
SOT-23 (DBV) 6 8.12 mm² 2.9 x 2.8
  • Low cost gate driver (offering optimal solution for driving FET and IGBTs)
  • Superior replacement to discrete transistor pair drive (providing easy interface with controller)
  • CMOS compatible input logic threshold (becomes fixed at VDD above 18V)
  • Split outputs allow separate turn-on and turn-off tuning
  • Enable with fixed TTL compatible threshold
  • High 2.5A source and 5A sink peak drive currents at 18V VDD
  • Wide VDD range from 10V up to 35V
  • Input pins capable of withstanding up to -5V DC below ground
  • Output held low when inputs are floating or during VDD UVLO
  • Fast propagation delays (17ns typical)
  • Fast rise and fall times (15ns and 7ns typical with 1800pF load)
  • Under Voltage Lockout (UVLO)
  • Used as a high-side or low-side driver (if designed with proper bias and signal isolation)
  • Low cost, space saving 6-pin DBV (SOT-23) package
  • Operating temperature range of -40°C to 140°C
  • Low cost gate driver (offering optimal solution for driving FET and IGBTs)
  • Superior replacement to discrete transistor pair drive (providing easy interface with controller)
  • CMOS compatible input logic threshold (becomes fixed at VDD above 18V)
  • Split outputs allow separate turn-on and turn-off tuning
  • Enable with fixed TTL compatible threshold
  • High 2.5A source and 5A sink peak drive currents at 18V VDD
  • Wide VDD range from 10V up to 35V
  • Input pins capable of withstanding up to -5V DC below ground
  • Output held low when inputs are floating or during VDD UVLO
  • Fast propagation delays (17ns typical)
  • Fast rise and fall times (15ns and 7ns typical with 1800pF load)
  • Under Voltage Lockout (UVLO)
  • Used as a high-side or low-side driver (if designed with proper bias and signal isolation)
  • Low cost, space saving 6-pin DBV (SOT-23) package
  • Operating temperature range of -40°C to 140°C

The UCC27532 is a single-channel, high-speed, gate driver capable of effectively driving MOSFET and IGBT power switches by up to 2.5A source and 5A sink (asymmetrical drive) peak current. Strong sink capability in asymmetrical drive boosts immunity against parasitic Miller turn-on effect. The UCC27532 device also features a split-output configuration where the gate-drive current is sourced through OUTH pin and sunk through OUTL pin. This pin arrangement allows the user to apply independent turn-on and turn-off resistors to the OUTH and OUTL pins respectively and easily control the switching slew rates.

The driver has rail-to-rail drive capability and extremely small propagation delay typically 17ns.

The UCC27532DBV has CMOS input threshold centered 55% rise and 45% fall in regards of VDD at VDD below or equal 18V. When VDD is above 18V, the input threshold remains fixed at its maximum level.

The driver has EN pin with fixed TTL compatible threshold. EN is internally pulled up; pulling EN low disables driver, while leaving it open provides normal operation. The EN pin can be used as an additional input with the same performance as the IN pin.

Leaving the input pin of driver open holds the output low. The logic behavior of the driver is shown in the application diagram, timing diagram and input and output logic truth table.

Internal circuitry on VDD pin provides an under voltage lockout function that holds output low until VDD supply voltage is within operating range.

The UCC27532 driver is offered in a 6-pin standard SOT-23 (DBV) package. The device operates over wide temperature range of -40°C to 140°C.

The UCC27532 is a single-channel, high-speed, gate driver capable of effectively driving MOSFET and IGBT power switches by up to 2.5A source and 5A sink (asymmetrical drive) peak current. Strong sink capability in asymmetrical drive boosts immunity against parasitic Miller turn-on effect. The UCC27532 device also features a split-output configuration where the gate-drive current is sourced through OUTH pin and sunk through OUTL pin. This pin arrangement allows the user to apply independent turn-on and turn-off resistors to the OUTH and OUTL pins respectively and easily control the switching slew rates.

The driver has rail-to-rail drive capability and extremely small propagation delay typically 17ns.

The UCC27532DBV has CMOS input threshold centered 55% rise and 45% fall in regards of VDD at VDD below or equal 18V. When VDD is above 18V, the input threshold remains fixed at its maximum level.

The driver has EN pin with fixed TTL compatible threshold. EN is internally pulled up; pulling EN low disables driver, while leaving it open provides normal operation. The EN pin can be used as an additional input with the same performance as the IN pin.

Leaving the input pin of driver open holds the output low. The logic behavior of the driver is shown in the application diagram, timing diagram and input and output logic truth table.

Internal circuitry on VDD pin provides an under voltage lockout function that holds output low until VDD supply voltage is within operating range.

The UCC27532 driver is offered in a 6-pin standard SOT-23 (DBV) package. The device operates over wide temperature range of -40°C to 140°C.

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Technische Dokumentation

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Typ Titel Datum
* Data sheet 2.5A and 5A, 35VMAX VDD FET and IGBT Single-Gate Driver datasheet (Rev. A) PDF | HTML 27 Sep 2024
Application note Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 22 Jan 2024
Application note Using a Single-Output Gate-Driver for High-Side or Low-Side Drive (Rev. B) PDF | HTML 08 Sep 2023
Application note Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver PDF | HTML 10 Nov 2021
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
Application brief Implementing a Bipolar Gate Drive for Low-Side IGBTs and SiC FETs in Motor Drive 10 Okt 2019
Application brief How to overcome negative voltage transients on low-side gate drivers' inputs 18 Jan 2019
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 Okt 2018
Selection guide Power Management Guide 2018 (Rev. R) 25 Jun 2018
Application note UCC27531 35-V Gate Driver for SiC MOSFET Applications (Rev. A) 08 Mai 2018
Application brief Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole 16 Mär 2018
EVM User's guide Using the UCC27532EVM-538 (Rev. A) 22 Aug 2013

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Evaluierungsplatine

UCC27531EVM-184 — UCC27531-Evaluierungsmodul

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Benutzerhandbuch: PDF
Simulationsmodell

UCC27532 PSpice Transient Model (Rev. A)

SLUM355A.ZIP (37 KB) - PSpice Model
Simulationsmodell

UCC27532 Unencrypted PSpice Transient Model

SLVMBG9.ZIP (2 KB) - PSpice Model
Berechnungstool

SLURB21 UCC2753X Schematic Review Template

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Gehäuse Pins CAD-Symbole, Footprints und 3D-Modelle
SOT-23 (DBV) 6 Ultra Librarian

Bestellen & Qualität

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  • Materialinhalt
  • Qualifikationszusammenfassung
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