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Controladores de medio puente

LMG1205

ACTIVO

Controlador de compuerta de medio puente de 1.2 A, 5 A y 90 V con UVLO de 5 V para GaNFET y MOSFE

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LMG1205

ACTIVO
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Detalles del producto

Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 5.5 Peak output current (A) 5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Catalog Propagation delay time (µs) 0.035 Rise time (ns) 7 Fall time (ns) 3.5 Iq (mA) 0.09 Input threshold TTL Channel input logic TTL Switch node voltage (V) -5 Features Bootstrap supply voltage clamp, Split outputs on high and low side Driver configuration Half bridge
Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 5.5 Peak output current (A) 5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Catalog Propagation delay time (µs) 0.035 Rise time (ns) 7 Fall time (ns) 3.5 Iq (mA) 0.09 Input threshold TTL Channel input logic TTL Switch node voltage (V) -5 Features Bootstrap supply voltage clamp, Split outputs on high and low side Driver configuration Half bridge
DSBGA (YFX) 12 3.24 mm² 1.8 x 1.8
  • Independent high-side and low-side TTL logic inputs
  • 1.2-A peak source, 5-A sink current
  • High-side floating bias voltage rail operates up to 100 VDC
  • Internal bootstrap supply voltage clamping
  • Split outputs for adjustable turnon, turnoff strength
  • 0.6-Ω pulldown, 2.1-Ω pullup resistance
  • Fast propagation times (35 ns typical)
  • Excellent propagation delay matching (1.5 ns typical)
  • Supply rail undervoltage lockout
  • Low power consumption
  • Independent high-side and low-side TTL logic inputs
  • 1.2-A peak source, 5-A sink current
  • High-side floating bias voltage rail operates up to 100 VDC
  • Internal bootstrap supply voltage clamping
  • Split outputs for adjustable turnon, turnoff strength
  • 0.6-Ω pulldown, 2.1-Ω pullup resistance
  • Fast propagation times (35 ns typical)
  • Excellent propagation delay matching (1.5 ns typical)
  • Supply rail undervoltage lockout
  • Low power consumption

The LMG1205 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14 V regardless of the VDD voltage. The LMG1205 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

In addition, the strong sink capability of the LMG1205 maintains the gate in the low state, preventing unintended turnon during switching. The LMG1205 can operate up to several MHz. The LMG1205 is available in a 12-pin DSBGA package that offers a compact footprint and minimized package inductance.

The LMG1205 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14 V regardless of the VDD voltage. The LMG1205 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

In addition, the strong sink capability of the LMG1205 maintains the gate in the low state, preventing unintended turnon during switching. The LMG1205 can operate up to several MHz. The LMG1205 is available in a 12-pin DSBGA package that offers a compact footprint and minimized package inductance.
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LMG1210 ACTIVO Controlador de puerta de medio puente de 1.5 A, 3 A y 200 V con UVLO de 5 V y tiempo muerto programa This product offers superior switching performance (10-ns prop delay, 1-ns delay matching), resistor-programmable deadtime, an internal LDO, and 300-V/ns CMTI.

Documentación técnica

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* Data sheet LMG1205 100-V, 1.2-A to 5-A, Half Bridge GaN Driver with Integrated Bootstrap Diode datasheet (Rev. B) PDF | HTML 14 abr 2023
Application note Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 25 mar 2024
Application note Implementing Bootstrap Overcharge Prevention in GaN Half-bridge Circuits PDF | HTML 15 nov 2023
Application note Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 08 sep 2023
Application brief GaN Applications PDF | HTML 10 ago 2022
Application brief GaN Driver Schematic and Layout Recommendations PDF | HTML 10 ago 2022
Application brief Key Parameters and Driving Requirements of GaN FETs PDF | HTML 04 ago 2022
Application brief Nomenclature, Types, and Structure of GaN Transistors PDF | HTML 04 ago 2022
Application brief How GaN Enables More Efficient and Reduced Form Factor Power Supplies PDF | HTML 02 ago 2022
Application brief External Gate Resistor Selection Guide (Rev. A) 28 feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 feb 2020
Application note GaN Gate Driver Layout Help 23 may 2019
White paper Optimizing multi-megahertz GaN driver design white paper (Rev. A) 27 nov 2018
EVM User's guide Using the LMG1205HBEVM 22 mar 2017
White paper A comprehensive methodology to qualify the reliability of GaN products 02 mar 2015

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

LMG1205HBEVM — Módulo de evaluación LMG1205 de etapa de potencia GaN

80-V 10A Power Stage EVM - The LMG1205 half-bridge EVM board is a small, easy to use, power stage with an external PWM signal. The EVM is suitable for evaluating the performance of the LMG1205 driving a GaN half-bridge in many different DC-DC converter topologies. It can be used to estimate the (...)

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Modelo de simulación

LMG1205 PSpice Transient Model (Rev. A)

SNOM624A.ZIP (35 KB) - PSpice Model
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Modelo de simulación

LMG1205 TINA-TI Reference Design (Rev. A)

SNOM622A.TSC (131 KB) - TINA-TI Reference Design
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Modelo de simulación

LMG1205 TINA-TI Transient Spice Model (Rev. A)

SNOM621A.ZIP (9 KB) - TINA-TI Spice Model
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Herramienta de cálculo

SNOR034 — LMG1205 Component Design Calculator and Schematic Review

Productos y hardware compatibles

Productos y hardware compatibles

Productos
Controladores de medio puente
LMG1205 — Controlador de compuerta de medio puente de 1.2 A, 5 A y 90 V con UVLO de 5 V para GaNFET y MOSFE
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Herramienta de simulación

PSPICE-FOR-TI — PSpice® para herramienta de diseño y simulación de TI

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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Encapsulado Pines Símbolos CAD, huellas y modelos 3D
DSBGA (YFX) 12 Ultra Librarian
Se aplican los Términos y condiciones estándar de TI para los elementos de evaluación.

Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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