LM9061
- Qualified for Automotive Applications
- AEC-Q100 Qualified With the Following Results:
- Device HBM ESD Classification Level 2
- Device CDM ESD Classification Level C4B
- Withstands 60-V Supply Transients
- Overvoltage Shut-OFF With VCC > 30 V
- Lossless Overcurrent Protection Latch-OFF
- Current Sense Resistor is Not Required
- Minimizes Power Loss With High Current Loads
- Programmable Delay of Protection Latch-OFF
- Gradual Turnoff to Minimize Inductive Load Transient Voltages
- CMOS Logic-Compatible ON and OFF Control Input
The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCC supply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.
Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the VDS voltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.
技術文件
設計與開發
如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。
LM9061EVM — LM9061EVM 高壓側保護控制器評估模組
The LM9061EVM evaluation module demonstrates high-side protection to a connected load from over-current and over-voltage conditions. An ON/OFF input controls the gate drive to a high-side MOSFET. Over-current protection is performed by monitoring the voltage drop (VDS) across the MOSFET, which is (...)
PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
TIDA-00296 — 汽車車身控制模組驅動器參考設計
封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
SOIC (D) | 8 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。