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Isolierte Gate-Treiber

ISO5852S

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Einkanaliger isolierter Gate-Treiber, 5,7 kVrms, 2,5/5 A mit Split-Ausgang, STO und Schutzfunktionen

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ISO5852S

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Produktdetails

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, MOSFET Peak output current (A) 5 Features Active miller clamp, Fault reporting, Power good, Short circuit protection, Soft turn-off, Split output Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 15 Input supply voltage (min) (V) 2.25 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.076 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 18 Fall time (ns) 20 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, MOSFET Peak output current (A) 5 Features Active miller clamp, Fault reporting, Power good, Short circuit protection, Soft turn-off, Split output Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 15 Input supply voltage (min) (V) 2.25 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.076 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 18 Fall time (ns) 20 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 100-kV/µs Minimum Common-Mode Transient Immunity (CMTI) at V CM = 1500 V
  • Split Outputs to Provide 2.5-A Peak Source and 5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ), 110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Soft Turn-Off (STO) during Short Circuit
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication
  • Active Output Pulldown and Default Low Outputs with Low Supply or Floating Inputs
  • 2.25-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Operating Temperature: –40°C to +125°C Ambient
  • Isolation Surge Withstand Voltage 12800-V PK
  • Safety-Related Certifications:
    • 8000-V PK V IOTM and 2121-V PK V IORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-V RMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification
  • 100-kV/µs Minimum Common-Mode Transient Immunity (CMTI) at V CM = 1500 V
  • Split Outputs to Provide 2.5-A Peak Source and 5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ), 110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Soft Turn-Off (STO) during Short Circuit
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication
  • Active Output Pulldown and Default Low Outputs with Low Supply or Floating Inputs
  • 2.25-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Operating Temperature: –40°C to +125°C Ambient
  • Isolation Surge Withstand Voltage 12800-V PK
  • Safety-Related Certifications:
    • 8000-V PK V IOTM and 2121-V PK V IORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-V RMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification

The ISO5852S device is a 5.7-kV RMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns provides accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT detect, a mute logic immediately blocks the output of the isolator and initiates a soft-turnoff procedure which disables the OUTH pin and pulls the OUTL pin to low over a time span of 2 µs. When the OUTL pin reaches 2 V with respect to the most-negative supply potential, V EE2, the gate-driver output is pulled hard to the V EE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turnoff period. The FLT output condition is latched and can be reset only after the RDY pin goes high, through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with a bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low-impedance path which prevents the IGBT from dynamic turnon during high-voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input-side and output-side supplies. If either side has insufficient supply, the RDY output goes low, otherwise this output is high.

The ISO5852S device is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

The ISO5852S device is a 5.7-kV RMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns provides accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT detect, a mute logic immediately blocks the output of the isolator and initiates a soft-turnoff procedure which disables the OUTH pin and pulls the OUTL pin to low over a time span of 2 µs. When the OUTL pin reaches 2 V with respect to the most-negative supply potential, V EE2, the gate-driver output is pulled hard to the V EE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turnoff period. The FLT output condition is latched and can be reset only after the RDY pin goes high, through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with a bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low-impedance path which prevents the IGBT from dynamic turnon during high-voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input-side and output-side supplies. If either side has insufficient supply, the RDY output goes low, otherwise this output is high.

The ISO5852S device is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.
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Technische Dokumentation

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Typ Titel Datum
* Data sheet ISO5852S High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features datasheet (Rev. C) PDF | HTML 30 Mai 2023
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 29 Feb 2024
Application note Digital Isolator Design Guide (Rev. G) PDF | HTML 13 Sep 2023
User guide UCC217xx and ISO5x5x Half-Bridge EVM User's Guide for Wolfspeed 1200-V SiC 01 Sep 2023
White paper Circuit Board Insulation Design According to IEC60664 for Motor Drive Apps PDF | HTML 31 Aug 2023
Certificate ISO5451 CQC Certificate of Product Certification 16 Aug 2023
Certificate TUV Certificate for Isolation Devices (Rev. K) 05 Aug 2022
Certificate UL Certificate of Compliance File E181974 Vol 4 Sec 6 (Rev. P) 05 Aug 2022
Application note Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 17 Feb 2022
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16 Dez 2021
Certificate CSA Certification (Rev. Q) 14 Jun 2021
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
Functional safety information Isolation in AC Motor Drives: Understanding the IEC 61800-5-1 Safety Standard (Rev. A) 19 Sep 2019
Technical article Designing highly efficient, powerful and fast EV charging stations PDF | HTML 06 Aug 2019
Analog Design Journal Pushing the envelope with high-performance digital-isolation technology (Rev. A) 22 Aug 2018
User guide ISO5852SDW Driving and Protecting SiC and IGBT Power Modules 24 Mai 2018
Functional safety information Isolation in solar power converters: Understanding the IEC62109-1 safety standar (Rev. A) 18 Mai 2018
Technical article Why capacitive isolation: a vital building block for sensors in smart cities PDF | HTML 16 Jan 2018
Application note Isolation Glossary (Rev. A) 19 Sep 2017
Technical article Understanding isolator failure modes for safe isolation PDF | HTML 28 Mär 2016
Technical article 7 steps to choose the right isolators for AC motor-drive applications PDF | HTML 24 Nov 2015
Analog Design Journal 4Q 2015 Analog Applications Journal 30 Okt 2015
Analog Design Journal Common-mode transient immunity for isolated gate drivers 30 Okt 2015
Analog Design Journal Pushing the envelope with high-performance digital-isolation technology 30 Okt 2015
EVM User's guide ISO5852S Evaluation Module User's Guide (Rev. A) 08 Sep 2015
White paper Understanding electromagnetic compliance tests in digital isolators 17 Okt 2014
White paper High-voltage reinforced isolation: Definitions and test methodologies 16 Okt 2014
Application note Shelf-Life Evaluation of Lead-Free Component Finishes 24 Mai 2004

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Evaluierungsplatine

ISO5852SDWEVM-017 — Evaluierungsplatine für Antriebstechnik und Schutz für SiC- und IGBT-Stromversorgungsmodule

The ISO5852SDWEVM-017 is a compact, dual chanel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for half-bridge Sic MOSFET and IGBT Power Modules in standard 62-mm package. This TI EVM is based on 5.7-kVrms reinforced isolation driver IC ISO5852SDW in (...)

Benutzerhandbuch: PDF
Nicht verfügbar auf TI.com
Evaluierungsplatine

ISO5852SEVM — Evaluierungsmodul für IGBT-Gate-Treiber mit verstärkter Isolierung

This evaluation module, featuring ISO5852S reinforced isolated gate driver device, allows designers to evaluate device AC and DC performance with a pre-populated 1-nF load or with a user-installed IGBT in either of the standard TO-247 or TO-220 packages.

Benutzerhandbuch: PDF
Nicht verfügbar auf TI.com
Simulationsmodell

ISO5852S IBIS Model

SLLM283.ZIP (33 KB) - IBIS Model
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Simulationsmodell

ISO5852S PSpice Transient Model (Rev. A)

SLLM300A.ZIP (232 KB) - PSpice Model
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Simulationsmodell

ISO5852S TINA-TI Reference Design

SLLM436.TSC (1537 KB) - TINA-TI Reference Design
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Simulationsmodell

ISO5852S TINA-TI SPICE Model

SLLM435.ZIP (31 KB) - TINA-TI Spice Model
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Simulationsmodell

ISO5852S Unencrypted PSPICE Transient Model

SLLM446.ZIP (4 KB) - PSpice Model
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Designtool

SLLR117 — ISO5852SDWEVM-017 Design Files

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Referenzdesigns

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