Gehäuseinformationen
| Gehäuse | Pins DSBGA (YFP) | 6 |
| Betriebstemperaturbereich (°C) -40 to 85 |
| Gehäusemenge | Träger 250 | SMALL T&R |
Merkmale von TPS22932B
- Input Voltage: 1.1 V to 3.6 V
- Ultralow ON-Resistance
- rON = 55 mΩ at VIN = 3.6 V
- rON = 65 mΩ at VIN = 2.5 V
- rON = 75 mΩ at VIN = 1.8 V
- rON = 115 mΩ at VIN = 1.2 V
- 500-mA Maximum Continuous Switch Current
- Quiescent Current < 1 µA
- Shutdown Current < 1 µA
- Low Control Threshold Allows Use of 1.2-V, 1.8-V,
2.5-V, and 3.3-V Logic - Configurable Enable Logic
- Controlled Slew Rate to Avoid Inrush Currents:
165 µs at 1.8 V - Six-Terminal Wafer Chip Scale Package (DSBGA)
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model
(A114-B, Class II) - 1000-V Charged-Device Model (C101)
- 2000-V Human-Body Model
- APPLICATIONS
- PDAs
- Cell Phones
- GPS Devices
- MP3 Players
- Digital Cameras
- Peripheral Ports
- Portable Instrumentation
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Beschreibung von TPS22932B
The TPS22932B device is a low rON load switch with controlled turnon. The device contains a P-channel MOSFET that can operate over an input voltage range of 1.1 V to 3.6 V.
The switch is controlled by eight patterns of 3-bit input. The user can choose the logic functions MUX, AND, OR, NAND, NOR, inverter, and noninverter. All inputs can be connected to VIN or GND. The control pins can be connected to low-voltage GPIOs allowing the switch to be controlled by either 1.2-V, 1.8-V, 2.5-V, or 3.3-V logic signals while keeping extremely low quiescent current.
A 120-Ω on-chip load resistor is available for output quick discharge when the switch is turned off. The rise time (slew rate) of the device is internally controlled to avoid inrush current: the rise time of TPS22932B is 165 µs.
TPS22932B is available in a space-saving 6-pin DSBGA (YFP with 0.4-mm pitch). The device is characterized for operation over the free-air temperature range of –40°C to 85°C.