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UCC21530-Q1

ACTIVO

Automotive, 4A, 6A, 5.7kVRMS, isolated dual-channel gate driver with EN and DT pins for IGBT/SiC

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UCC21551-Q1 ACTIVO Controlador de compuerta aislado de 5 kVrms y 4 A-6 A de dos canales con pines EN y DT para IGBT y S Tighter VCCI range supporting digital controller thresholds. New DT equation. Increased CMTI and wider operating temperature range.

UCC21530-Q1

ACTIVO
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Detalles del producto

Number of channels 2 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 TI functional safety category Functional Safety Quality-Managed Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Enable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 14.7 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 7 Undervoltage lockout (typ) (V) 8, 12
Number of channels 2 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 TI functional safety category Functional Safety Quality-Managed Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Enable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 14.7 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 7 Undervoltage lockout (typ) (V) 8, 12
SOIC (DWK) 14 106.09 mm² 10.3 x 10.3
  • AEC-Q100 qualified with:
    • Device temperature grade 1
  • Functional Safety Quality-Managed
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Wide body SOIC-14 (DWK) package
  • 3.3mm spacing between driver channels
  • Switching parameters:
    • 33ns typical propagation delay
    • 20ns minimum pulse width
    • 6ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • 4A peak source, 6A peak sink output
  • TTL and CMOS compatible inputs
  • 3V to 18V input VCCI range
  • Up to 25V VDD output drive supply
    • 8V,12V and 17V VDD UVLO options
  • Programmable overlap and dead time
  • Junction temperature range –40 to +150°C
  • AEC-Q100 qualified with:
    • Device temperature grade 1
  • Functional Safety Quality-Managed
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Wide body SOIC-14 (DWK) package
  • 3.3mm spacing between driver channels
  • Switching parameters:
    • 33ns typical propagation delay
    • 20ns minimum pulse width
    • 6ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • 4A peak source, 6A peak sink output
  • TTL and CMOS compatible inputs
  • 3V to 18V input VCCI range
  • Up to 25V VDD output drive supply
    • 8V,12V and 17V VDD UVLO options
  • Programmable overlap and dead time
  • Junction temperature range –40 to +150°C

The UCC21530-Q1 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5MHz.

The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850V.

This device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.

The UCC21530-Q1 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5MHz.

The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850V.

This device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.
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El manual de seguridad y el informe de la tasa de fallas en el tiempo (FIT) de seguridad de UCC21530-Q1 están disponibles. Solicitar ahora

Documentación técnica

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* Data sheet UCC21530-Q1 4A, 6A, 5.7kVRMS Isolated Dual-Channel Gate Driver with 3.3mm Channel-to-Channel Spacing datasheet (Rev. F) PDF | HTML 17 sep 2024
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 29 feb 2024
Application note Impact of Narrow Pulse Widths in Gate Driver Circuits (Rev. A) PDF | HTML 25 ene 2024
White paper Addressing High-Volt Design Challenges w/ Reliable and Affordable Isolation Tech (Rev. C) PDF | HTML 26 sep 2023
Certificate UCC21540 CQC Certificate of Product Certification 17 ago 2023
Certificate UCC215xx CQC Certificate of Product Certification 17 ago 2023
Certificate UL Certification E181974 Vol 4. Sec 7 (Rev. C) 02 dic 2022
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16 dic 2021
Certificate CSA Product Certificate (Rev. A) 15 ago 2019
Technical article Searching for the newest innovations in power? Find them at APEC PDF | HTML 09 feb 2019

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

UCC21530EVM-286 — Módulo de evaluación UCC21530 de controlador aislado de doble canal

UCC21530EVM-286 is designed for evaluating UCC21530DWK, which is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current, 12V UVLO, Enable (Active High) Function and 3.3 mm creepage between channels . This EVM could be served as a reference design for driving IGBTS and SiC (...)
Guía del usuario: PDF | HTML
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Controlador o biblioteca

UCC21520-Q1-DESIGN — UCC21520-Q1 design resources

FuSa supporting document
Productos y hardware compatibles

Productos y hardware compatibles

Productos
Drivers de compuerta aislados
UCC21520-Q1 — Controlador de compuerta de doble canal aislado de 4 A, 6 A y 5.7 kVRMS con doble entrada, desactiva UCC21530-Q1 — Automotive, 4A, 6A, 5.7kVRMS, isolated dual-channel gate driver with EN and DT pins for IGBT/SiC
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Controlador o biblioteca

UCC21530-Q1-DESIGN — UCC21530-Q1 design resources

FS documents
Productos y hardware compatibles

Productos y hardware compatibles

Productos
Drivers de compuerta aislados
UCC21530-Q1 — Automotive, 4A, 6A, 5.7kVRMS, isolated dual-channel gate driver with EN and DT pins for IGBT/SiC
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Modelo de simulación

UCC21530 PSpice Transient Model

SLUM655.ZIP (23 KB) - PSpice Model
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Herramienta de simulación

PSPICE-FOR-TI — PSpice® para herramienta de diseño y simulación de TI

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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Diseños de referencia

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El TIDM-02012 es un diseño de referencia de alto voltaje y 5 kW creado para aplicaciones de compresores HEV/EV (eCompressor) controlados por una MCU en tiempo real C2000™ TMS320F28003x de rendimiento medio. Está diseñado para evaluarse con bus de CC de 400 V y 800 V, cubriendo la tendencia (...)
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Esquema: PDF
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TIDA-01605 — Diseño de referencia de controlador de puerta SiC MOSFET de dos canales para automoción, con protecc

This reference design is an automotive qualified isolated gate driver solution for driving Silicon Carbide (SiC) MOSFETs in half bridge configuration. The design includes two push pull bias supplies for the dual channel isolated gate driver respectively and each supply provides +15V and -4V output (...)
Design guide: PDF
Esquema: PDF
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CLLLC resonant DAB with bidirectional power flow capability and soft switching characteristics is an ideal candidate for Hybrid Electric Vehicle/Electric Vehicle (HEV/EV) on-board chargers and energy storage applications. This design illustrates control of this power topology using a C2000™ (...)
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This 6.6 kW, bi-directional, dual-active-bridge resonant converter reference design allows 380 VDC to 600 VDC input and 280 VDC to 450 VDC output. PCB winding transformer and Rogowski coil synchronous rectifier (SR) control are applied in this design for power density and efficiency optimization. (...)
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Diseños de referencia

PMP21561 — Diseño de referencia de controlador SiC MOSFET secundario con aislamiento de seguridad

This reference design provides an integrated high and low side isolated secondary gate driver solution for an automotive battery charging system incorporating two push-pull SN6505B transformer drivers and the isolated dual-channel gate driver UCC21521C.
Test report: PDF
Esquema: PDF
Diseños de referencia

PMP21553 — Diseño de referencia de controlador SiC MOSFET primario aislado de seguridad

This reference design provides an integrated high and low side isolated primary gate driver solution for an automotive battery charging system incorporating two push-pull SN6505B transformer drivers and the isolated dual-channel gate driver UCC21521C.
Test report: PDF
Esquema: PDF
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SOIC (DWK) 14 Ultra Librarian
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Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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