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Gestión de la energía
Controladores de compuertas
Drivers del lado de tierra

UCC27517A-Q1

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Controlador de puerta monocanal (4 A/4 A) con UVLO de 5 V y estructura de entrada doble para automoc

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UCC27517A-Q1

ACTIVO
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Detalles del producto

Number of channels 1 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 4 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 18 Features Hysteretic Logic Operating temperature range (°C) -40 to 125 Rise time (ns) 9 Fall time (ns) 7 Propagation delay time (µs) 0.013 Input threshold CMOS, TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) -5 Rating Automotive Undervoltage lockout (typ) (V) 4 Driver configuration Inverting, Non-Inverting
Number of channels 1 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 4 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 18 Features Hysteretic Logic Operating temperature range (°C) -40 to 125 Rise time (ns) 9 Fall time (ns) 7 Propagation delay time (µs) 0.013 Input threshold CMOS, TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) -5 Rating Automotive Undervoltage lockout (typ) (V) 4 Driver configuration Inverting, Non-Inverting
SOT-23 (DBV) 5 8.12 mm² 2.9 x 2.8
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Automotive Qualified Grade 1: –40°C
      to 125°C Ambient Operating Temperature
      Range
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C6
  • Low-Cost Gate-Driver Device Offering Superior
    Replacement of NPN and PNP Discrete Solutions
  • 4-A Peak-Source and Sink Symmetrical Drive
  • Ability to Handle Negative Voltages (–5 V) at
    Inputs
  • Fast Propagation Delays (13-ns typical)
  • Fast Rise and Fall Times (9-ns and 7-ns typical)
  • 4.5 to 18-V Single-Supply Range
  • Outputs Held Low During VDD UVLO (ensures
    glitch-free operation at power up and power down)
  • TTL and CMOS Compatible Input-Logic Threshold
    (independent of supply voltage)
  • Hysteretic-Logic Thresholds for High-Noise
    Immunity
  • Dual Input Design (choice of an inverting (IN– pin)
    or non-inverting (IN+ pin) driver configuration)
    • Unused Input Pin can be Used for Enable or
      Disable Function
  • Output Held Low when Input Pins are Floating
  • Input Pin Absolute Maximum Voltage Levels Not
    Restricted by VDD Pin Bias Supply Voltage
  • Operating Temperature Range of –40°C to 140°C
  • 5-Pin DBV (SOT-23) Package Option
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Automotive Qualified Grade 1: –40°C
      to 125°C Ambient Operating Temperature
      Range
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C6
  • Low-Cost Gate-Driver Device Offering Superior
    Replacement of NPN and PNP Discrete Solutions
  • 4-A Peak-Source and Sink Symmetrical Drive
  • Ability to Handle Negative Voltages (–5 V) at
    Inputs
  • Fast Propagation Delays (13-ns typical)
  • Fast Rise and Fall Times (9-ns and 7-ns typical)
  • 4.5 to 18-V Single-Supply Range
  • Outputs Held Low During VDD UVLO (ensures
    glitch-free operation at power up and power down)
  • TTL and CMOS Compatible Input-Logic Threshold
    (independent of supply voltage)
  • Hysteretic-Logic Thresholds for High-Noise
    Immunity
  • Dual Input Design (choice of an inverting (IN– pin)
    or non-inverting (IN+ pin) driver configuration)
    • Unused Input Pin can be Used for Enable or
      Disable Function
  • Output Held Low when Input Pins are Floating
  • Input Pin Absolute Maximum Voltage Levels Not
    Restricted by VDD Pin Bias Supply Voltage
  • Operating Temperature Range of –40°C to 140°C
  • 5-Pin DBV (SOT-23) Package Option

The UCC27517A-Q1 single-channel high-speed low-side gate-driver device effectively drives MOSFET and IGBT power switches. With a design that inherently minimizes shoot-through current, the UCC27517A-Q1 sources and sinks high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.

The UCC27517A-Q1 device handles –5 V at input.

The UCC27517A-Q1 provides 4-A source and 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V.

The UCC27517A-Q1 operates over a wide VDD range of 4.5 V to 18 V and wide temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin holds the output low outside VDD operating range. The ability to operate at low voltage levels such as below 5 V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such as GaN power-semiconductor devices.

The UCC27517A-Q1 single-channel high-speed low-side gate-driver device effectively drives MOSFET and IGBT power switches. With a design that inherently minimizes shoot-through current, the UCC27517A-Q1 sources and sinks high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.

The UCC27517A-Q1 device handles –5 V at input.

The UCC27517A-Q1 provides 4-A source and 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V.

The UCC27517A-Q1 operates over a wide VDD range of 4.5 V to 18 V and wide temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin holds the output low outside VDD operating range. The ability to operate at low voltage levels such as below 5 V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such as GaN power-semiconductor devices.
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Documentación técnica

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* Data sheet UCC27517A-Q1 Single-Channel High-Speed Low-Side Gate Driver with Negative Input Voltage Capability (with 4-A Peak Source and Sink) datasheet (Rev. B) PDF | HTML 28 ago 2015
Application note Selecting Gate Drivers for HVAC Systems PDF | HTML 04 abr 2024
Functional safety information UCC27517A-Q1 Functional Safety, FIT Rate, Failure Mode Distribution and Pin FMA PDF | HTML 16 jun 2021
Application brief External Gate Resistor Selection Guide (Rev. A) 28 feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 feb 2020
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 oct 2018

Diseño y desarrollo

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SOT-23 (DBV) 5 Ultra Librarian
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Pedidos y calidad

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  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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