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LM5102

現行

具 8-V UVLO 和可編程延遲的 2-A、100-V 半橋閘極驅動器

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產品規格表

LM5102

現行
產品規格表 立即訂購

產品詳細資料

Bootstrap supply voltage (max) (V) 100 Power switch MOSFET Input supply voltage (min) (V) 9 Input supply voltage (max) (V) 14 Peak output current (A) 2 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.035 Rise time (ns) 10 Fall time (ns) 10 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Independent
Bootstrap supply voltage (max) (V) 100 Power switch MOSFET Input supply voltage (min) (V) 9 Input supply voltage (max) (V) 14 Peak output current (A) 2 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.035 Rise time (ns) 10 Fall time (ns) 10 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Independent
VSSOP (DGS) 10 14.7 mm² 3 x 4.9 WSON (DPR) 10 16 mm² 4 x 4
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • Independently Programmable High and Low Side Rising Edge Delay
  • Bootstrap Supply Voltage Range up to 118 V dc
  • Fast Turn-Off Propagation Delay (25 ns Typical)
  • Drives 1000-pF Loads with 15-ns Rise and Fall Times
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Timer Can Be Terminated Midway Through Sequence
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • Independently Programmable High and Low Side Rising Edge Delay
  • Bootstrap Supply Voltage Range up to 118 V dc
  • Fast Turn-Off Propagation Delay (25 ns Typical)
  • Drives 1000-pF Loads with 15-ns Rise and Fall Times
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Timer Can Be Terminated Midway Through Sequence

The LM5102 high-voltage gate driver is designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with supply voltages up to 100 V. The outputs are independently controlled. The rising edge of each output can be independently delayed with a programming resistor. An integrated high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from control logic to the high side gate driver. Undervoltage lockout is provided on both the low side and the high side power rails. This device is available in the standard VSSOP 10 pin and the WSON 10 pin packages.

For all available packages, see the orderable addendum at the end of the data sheet.

The LM5102 high-voltage gate driver is designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with supply voltages up to 100 V. The outputs are independently controlled. The rising edge of each output can be independently delayed with a programming resistor. An integrated high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from control logic to the high side gate driver. Undervoltage lockout is provided on both the low side and the high side power rails. This device is available in the standard VSSOP 10 pin and the WSON 10 pin packages.

For all available packages, see the orderable addendum at the end of the data sheet.
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類型 標題 日期
* Data sheet LM5102 High-Voltage Half-Bridge Gate Driver With Programmable Delay datasheet (Rev. B) PDF | HTML 2014年 12月 15日
Application brief External Gate Resistor Selection Guide (Rev. A) 2020年 2月 28日
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020年 2月 28日
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日

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