LM74701-Q1
- AEC-Q100 qualified with the following results
- Device temperature grade 1: –40°C to +125°C ambient operating temperature range
- Device HBM ESD classification level 2
- Device CDM ESD classification level C4B
- 3.2-V to 65-V input range (3.9-V startup)
- –33-V reverse voltage rating
- Charge pump for external N-Channel MOSFET
- 20 mV ANODE to CATHODE forward voltage drop regulation
- 1-µA shutdown current (EN = Low)
- 80-µA operating quiescent current (EN = High)
- 2-A peak gate turn-off current
- Fast response to reverse current blocking: < 0.75 µs
- Integrated battery voltage monitoring switch (SW)
- Meets automotive ISO7637 transient requirements without additional input TVS diode (TVS less)
- 8-Pin SOT-23 package 2.90 mm × 1.60 mm
The LM74701-Q1 is an automotive AEC Q100 qualified ideal diode controller which operates in conjunction with an external N-channel MOSFET as an ideal diode for low loss reverse polarity protection with a 20-mV forward voltage drop. LM74701-Q1 is suitable for input protection of 12-V automotive systems. The 3.2-V input voltage support is particularly well suited for severe cold crank requirements in automotive systems.
The device controls the GATE of the MOSFET to regulate the forward voltage drop at 20 mV. The regulation scheme enables graceful turn-off of the MOSFET during a reverse current event and ensures zero DC reverse current flow. Fast response (< 0.75 µs) to reverse current blocking makes the device suitable for systems with output voltage holdup requirements during ISO7637 pulse testing as well as power fail and input micro-short conditions. The LM74701-Q1 has a unique integrated VDS clamp feature which enables users to achieve TVS less input polarity protection solution and save on average a typical 60% of PCB space in constrained automotive systems.
The LM74701-Q1 controller provides a charge pump gate drive for an external N-channel MOSFET. With the enable pin low, the controller is off and draws approximately 1 µA of current.
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LM74701Q1EVM — LM74701-Q1 評估模組,適用於具有整合式 VDS 箝位的理想二極體控制器
LM74701-Q1 評估模組 (LM74701Q1EVM) 可協助設計人員評估具有整合 VDS 箝位的 LM74701-Q1 理想二極體控制器的運作和性能。此評估模組示範如何使用 N 通道電源 MOSFET,以低 IQ LM74701-Q1 控制器實現輸入反向電壓保護
PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
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此設計使用高性能微控制器進行開發和測試應用。這些功能讓此參考設計適用於高容量電池架應用的中央控制器。
封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
SOT-23-THN (DDF) | 8 | Ultra Librarian |
訂購與品質
- RoHS
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- 產品標記
- 鉛塗層/球物料
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- MTBF/FIT 估算值
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建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。