計算工具
LM749X0-CALC — Design calculator for LM74900-Q1 and LM74910-Q1 devices
The design calculator allows user to size the external peripheral components while designing with LM74900-Q1 and LM74910-Q1 Devices
LM74900-Q1
- AEC-Q100 qualified for automotive applications
- Device temperature grade 1: –40°C to +125°C ambient operating temperature range
- Functional Safety-Capable
- 3-V to 65-V input range
- Reverse input protection down to –65 V
- Drives external back-to-back N-Channel MOSFETs in common drain configuration
- Ideal diode operation with 10.5-mV A to C forward voltage drop regulation
- Low reverse detection threshold (–10.5 mV) with fast turn off response (0.5 µs)
- 20-mA peak gate (DGATE) turn on current
- 2.6-A peak DGATE turnoff current
- Adjustable overcurrent and short circuit protection
- Analog current monitor output with 10% accuracy (IMON)
- Adjustable overvoltage and undervoltage protection
- Low 2.5-µA shutdown current (EN=Low)
- SLEEP mode with 6-µA current (EN=High, SLEEP=Low)
- Meets automotive ISO7637 transient requirements with a suitable TVS diode
- Available in space saving 24-Pin VQFN package
The LM749x0-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control with overcurrent and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) in case of overcurrent and overvoltage events using HGATE control. The device has integrated current sense amplifier which provides accurate current monitoring with adjustable overcurrent and short circuit thresholds. The device features an adjustable overvoltage cut-off protection feature. The device features a SLEEP mode which enables ultra-low quiescent current consumption (6 µA) and at the same time providing refresh current to the always ON loads when vehicle is in the parking state. The LM749x0-Q1 has a maximum voltage rating of 65 V.
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檢視所有 7 | 類型 | 標題 | 日期 | ||
|---|---|---|---|---|
| * | Data sheet | LM749x0-Q1 Automotive Ideal Diode With Circuit Breaker, Undervoltage, and Overvoltage Protection With Fault Output datasheet (Rev. B) | PDF | HTML | 2023年 7月 18日 |
| Functional safety information | LM749x0-Q1 Functional Safety FIT Rate, FMD and Pin FMA | PDF | HTML | 2024年 2月 29日 | |
| Analog Design Journal | 適合使用理想二極體控制器的汽車應用備援電源拓撲 | PDF | HTML | 2024年 2月 15日 | |
| EVM User's guide | LM74900Q1EVM Evaluation Module for LM749x0-Q1 Ideal Diode Controller (Rev. A) | PDF | HTML | 2023年 7月 3日 | |
| Application note | Addressing Automotive Reverse Battery Protection Topologies with LM749x0-Q1 | PDF | HTML | 2023年 6月 13日 | |
| Application brief | Priority Power MUX using Ideal Diodes in Automotive Zonal Modules | PDF | HTML | 2023年 5月 23日 | |
| Certificate | LM74900Q1EVM EU RoHS Declaration of Conformity (DoC) | 2022年 11月 1日 |
設計與開發
如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。
開發板
LM74900Q1EVM — 適用於理想二極體控制器的 LM74900-Q1 評估模組
在反向電池保護應用中，LM74900-Q1 評估模組可評估 LM74900-Q1 理想二極體控制器的運作及性能。此評估模組示範 LM74900-Q1 如何控制兩個背對背 N 通道電源 MOSFET，模擬具有電源路徑開/關控制、過電流和過電壓防護的理想二極體整流器。
模擬工具
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PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
參考設計
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The LM74900-Q1 is the first stage of the design playing a role of protection for negative input voltage, undervoltage, locked output, and (...)
Test report: PDF
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RGE) | 24 | Ultra Librarian |
訂購與品質
內含資訊：
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
內含資訊：
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。