TPS7H2211-SEP
- Total ionizing dose (TID) characterized to 100krad(Si)
- Radiation hardness assurance availability of 100krad(Si)
- Single-event effects (SEE) characterized
- Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg*
- Single-event functional interrupt (SEFI) and single-event transient (SET) characterized to LET = 75MeV-cm2/mg*
- Integrated single channel eFuse
- Input voltage range: 4.5V to 14V
- Low on-resistance (RON) of 60mΩ maximum at 25°C and VIN = 12V
- 3.5A maximum continuous switch current
- Low control input threshold aids in use of 1.2, 1.8, 2.5, and 3.3V logic
- Configurable rise time (soft start)
- Reverse current protection (RCP)
- Overvoltage protection (OVP)
- Internal current limit (fast-trip)
- Thermal shutdown
- Ceramic and plastic package with thermal pad
- Available in military (–55°C to 125°C) temperature range
The TPS7H2211 is a single channel eFuse (integrated FET load switch with additional features) that provides reverse current protection, overvoltage protection, and a configurable rise time to minimize inrush current, soft start. The device contains P-channel MOSFETs that operate over an input voltage range of 4.5V to 14V and supports a maximum continuous current of 3.5A.
The switch is controlled by an on and off input (EN), which is capable of interfacing directly with low-voltage control signals. Overvoltage protection and soft start are programmable with few external components through the OVP and SS pins. The TPS7H2211 is available in a ceramic and plastic package with an exposed thermal pad allowing for improved thermal performance. A standard microcircuit drawing (SMD) is available for the QML 5962R1822001VXC. A vendor item drawing (VID) is available for the -SEP variant, V62/23609.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 日期 |
|---|---|---|---|---|
| * | Data sheet | TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse datasheet (Rev. F) | PDF | HTML | 2024年 3月 6日 |
| * | VID | TPS7H2211-SEP VID V62-23609 | 2024年 5月 1日 | |
| * | Radiation & reliability report | TPS7H2211-SEP Production Flow and Reliability Report | PDF | HTML | 2023年 9月 29日 |
| * | Radiation & reliability report | TPS7H2211-SEP Total Ionizing Dose (TID) Report (Rev. B) | PDF | HTML | 2023年 9月 28日 |
| * | Radiation & reliability report | TPS7H2211-SEP Neutron Displacement (NDD) Characterization Report | PDF | HTML | 2023年 8月 28日 |
| * | Radiation & reliability report | Single Event Effects Report of the TPS7H2211-SEP eFuse | PDF | HTML | 2023年 6月 7日 |
| Selection guide | TI Space Products (Rev. K) | 2025年 4月 4日 | ||
| Certificate | TPS7H2211EVM EU Declaration of Conformity (DoC) | 2023年 6月 21日 | ||
| Application note | Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A) | PDF | HTML | 2022年 9月 15日 | |
| E-book | Radiation Handbook for Electronics (Rev. A) | 2019年 5月 21日 |
設計與開發
如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。
TPS7H2211EVM — 航太級強化型產品、4.5-V 至 14-V 輸入、3.5-A、負載開關和 eFuse 評估模組
TPS7H2211EVM 展示單一 TPS7H2211 eFuse 航太級強化型產品的運作情況。電路板提供可裝入其他元件的元件封裝，以便進行自訂配置測試，例如平行或備援 eFuse。
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| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| HTSSOP (DAP) | 32 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
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