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TPS22906

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3,6-V-, 0,5-A-, 90-mΩ-Lastschalter mit Ausgangsentladung

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Selbe Funktionalität wie der verglichene Baustein bei abweichender Anschlussbelegung
TPS22901 AKTIV 3,6-V-, 0,5-A-, 78-mΩ-, 22-nA-Lecklastschalter Faster rise time

TPS22906

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Produktdetails

Number of channels 1 Vin (min) (V) 1 Vin (max) (V) 3.6 Imax (A) 0.5 Ron (typ) (mΩ) 93 Shutdown current (ISD) (typ) (µA) 0.88 Quiescent current (Iq) (typ) (µA) 0.204 Soft start Fixed Rise Time Current limit type None Features Inrush current control, Quick output discharge Rating Catalog Operating temperature range (°C) -40 to 85 FET Internal Device type Load switches
Number of channels 1 Vin (min) (V) 1 Vin (max) (V) 3.6 Imax (A) 0.5 Ron (typ) (mΩ) 93 Shutdown current (ISD) (typ) (µA) 0.88 Quiescent current (Iq) (typ) (µA) 0.204 Soft start Fixed Rise Time Current limit type None Features Inrush current control, Quick output discharge Rating Catalog Operating temperature range (°C) -40 to 85 FET Internal Device type Load switches
DSBGA (YZV) 4 1.5625 mm² 1.25 x 1.25
  • Low-Input Voltage: 1.0 V to 3.6 V
  • Ultra-Low ON-State Resistance
    • rON = 90 mΩ at VIN = 3.6 V
    • rON = 100 mΩ at VIN = 2.5 V
    • rON = 114 mΩ at VIN = 1.8 V
    • rON = 172 mΩ at VIN = 1.2 V
  • 500-mA Maximum Continuous Switch Current
  • Ultra-Low Quiescent Current: 82 nA at 1.8 V
  • Ultra-Low Shutdown Current: 44 nA at 1.8 V
  • Low Control Input Thresholds Enable Use of 1.2-V/
    1.8-V/2.5-V/3.3-V Logic
  • Controlled Slew Rate to Avoid Inrush Current:
    220 µs tr
  • ESD Performance Tested Per JESD 22
    • 2000-V Human Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Four-Terminal Wafer-Chip-Scale Package
    (WCSP)
    • 0.9 mm × 0.9 mm,
      0.5-mm Pitch, 0.5-mm Height
  • Low-Input Voltage: 1.0 V to 3.6 V
  • Ultra-Low ON-State Resistance
    • rON = 90 mΩ at VIN = 3.6 V
    • rON = 100 mΩ at VIN = 2.5 V
    • rON = 114 mΩ at VIN = 1.8 V
    • rON = 172 mΩ at VIN = 1.2 V
  • 500-mA Maximum Continuous Switch Current
  • Ultra-Low Quiescent Current: 82 nA at 1.8 V
  • Ultra-Low Shutdown Current: 44 nA at 1.8 V
  • Low Control Input Thresholds Enable Use of 1.2-V/
    1.8-V/2.5-V/3.3-V Logic
  • Controlled Slew Rate to Avoid Inrush Current:
    220 µs tr
  • ESD Performance Tested Per JESD 22
    • 2000-V Human Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Four-Terminal Wafer-Chip-Scale Package
    (WCSP)
    • 0.9 mm × 0.9 mm,
      0.5-mm Pitch, 0.5-mm Height

TPS22906 device is an ultra-small, low ON-state resistance (rON) load switch with controlled turn on. The device contains a P-channel MOSFET that operates over an input voltage range of 1.0 V to 3.6 V. The switch is controlled by an on/off input (ON), which is capable of interfacing directly with low-voltage control signals. A 120-Ω on-chip load resistor is added for output quick discharge when the switch is turned off. TPS22906 is available in a space-saving 4-terminal WCSP with 0.5-mm pitch (YZV). The device is characterized for operation over the free-air temperature range of –40°C to 85°C.

TPS22906 device is an ultra-small, low ON-state resistance (rON) load switch with controlled turn on. The device contains a P-channel MOSFET that operates over an input voltage range of 1.0 V to 3.6 V. The switch is controlled by an on/off input (ON), which is capable of interfacing directly with low-voltage control signals. A 120-Ω on-chip load resistor is added for output quick discharge when the switch is turned off. TPS22906 is available in a space-saving 4-terminal WCSP with 0.5-mm pitch (YZV). The device is characterized for operation over the free-air temperature range of –40°C to 85°C.
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* Data sheet TPS22906 Ultra-Small, Low-Input Voltage, Low rON Load Switch datasheet (Rev. A) PDF | HTML 22 Jul 2015

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  • Blei-Finish/Ball-Material
  • MSL-Rating / Spitzenrückfluss
  • MTBF-/FIT-Schätzungen
  • Materialinhalt
  • Qualifikationszusammenfassung
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