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LM74912-Q1

現行

具有整合式過電壓與短路保護和故障輸出的車用理想二極體

產品詳細資料

Vin (min) (V) 3 Vin (max) (V) 65 Number of channels 1 Features Adjustable current limit, Analog current monitor, Overvoltage protection, Reverse current blocking, Reverse polarity protection, Short circuit protection, Under voltage lock out Iq (typ) (mA) 0.63 TI functional safety category Functional Safety-Capable FET External back-to-back FET IGate source (typ) (µA) 18500 IGate sink (typ) (mA) 2670 Operating temperature range (°C) -40 to 125 Rating Automotive Shutdown current (ISD) (mA) (A) 0.00287 Device type Ideal diode controller Product type Ideal diode controller
Vin (min) (V) 3 Vin (max) (V) 65 Number of channels 1 Features Adjustable current limit, Analog current monitor, Overvoltage protection, Reverse current blocking, Reverse polarity protection, Short circuit protection, Under voltage lock out Iq (typ) (mA) 0.63 TI functional safety category Functional Safety-Capable FET External back-to-back FET IGate source (typ) (µA) 18500 IGate sink (typ) (mA) 2670 Operating temperature range (°C) -40 to 125 Rating Automotive Shutdown current (ISD) (mA) (A) 0.00287 Device type Ideal diode controller Product type Ideal diode controller
VQFN (RGE) 24 16 mm² 4 x 4
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
  • Functional Safety-Capable
  • 3-V to 65-V input range
  • Reverse input protection down to –65 V
  • Drives external back-to-back N-channel MOSFETs in common drain configuration
  • Ideal diode operation with 10.5-mV A to C forward voltage drop regulation
  • Low reverse detection threshold (–10.5 mV) with fast response (0.5 µs)
  • 20-mA peak gate (DGATE) turn-on current
  • 2.6-A peak DGATE turn-off current
  • Adjustable overvoltage and undervoltage protection
  • Output short circuit protection with MOSFET latched off state
  • Ultra low power mode with 2.5-µA shutdown current (EN=Low)
  • SLEEP mode with 6-µA current (EN=High, SLEEP=Low)
  • Meets automotive ISO7637 transient requirements with a suitable transient voltage suppressor (TVS) diode
  • Available in 4 mm × 4 mm 24-pin VQFN package
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
  • Functional Safety-Capable
  • 3-V to 65-V input range
  • Reverse input protection down to –65 V
  • Drives external back-to-back N-channel MOSFETs in common drain configuration
  • Ideal diode operation with 10.5-mV A to C forward voltage drop regulation
  • Low reverse detection threshold (–10.5 mV) with fast response (0.5 µs)
  • 20-mA peak gate (DGATE) turn-on current
  • 2.6-A peak DGATE turn-off current
  • Adjustable overvoltage and undervoltage protection
  • Output short circuit protection with MOSFET latched off state
  • Ultra low power mode with 2.5-µA shutdown current (EN=Low)
  • SLEEP mode with 6-µA current (EN=High, SLEEP=Low)
  • Meets automotive ISO7637 transient requirements with a suitable transient voltage suppressor (TVS) diode
  • Available in 4 mm × 4 mm 24-pin VQFN package

The LM74912-Q1 ideal diode controller drives and controls external back to back N-channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control with overvoltage, undervoltage and output short circuit protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) in case of overcurrent and overvoltage events using HGATE control. The device has integrated current sense amplifier which provides external MOSFET VDS sense based short circuit protection with an adjustable current limit. When short circuit condition is detected on the output then device latches off the load disconnect MOSFET. The device features an adjustable overvoltage cut-off protection feature. The device features a SLEEP mode which enables ultra low quiescent current consumption (6 µA) and at the same time providing refresh current to the always ON loads when vehicle is in the parking state. The LM74912-Q1 has a maximum voltage rating of 65 V.

The LM74912-Q1 ideal diode controller drives and controls external back to back N-channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control with overvoltage, undervoltage and output short circuit protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) in case of overcurrent and overvoltage events using HGATE control. The device has integrated current sense amplifier which provides external MOSFET VDS sense based short circuit protection with an adjustable current limit. When short circuit condition is detected on the output then device latches off the load disconnect MOSFET. The device features an adjustable overvoltage cut-off protection feature. The device features a SLEEP mode which enables ultra low quiescent current consumption (6 µA) and at the same time providing refresh current to the always ON loads when vehicle is in the parking state. The LM74912-Q1 has a maximum voltage rating of 65 V.

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類型 標題 日期
* Data sheet LM74912-Q1 Automotive Ideal Diode Controller With Fault Output and Overvoltage, Undervoltage, and Short Circuit Protection datasheet (Rev. A) PDF | HTML 2023年 9月 20日
Application brief Enabling Ultra Low Quiescent Current Through LM74912- Q1 Sleep Mode While Powering Always On Loads PDF | HTML 2023年 12月 11日
Certificate LM74912Q1EVM EU Declaration of Conformity (DoC) 2023年 6月 26日

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開發板

LM74912Q1EVM — 適用於理想二極體控制器的 LM74912-Q1 評估模組

在反向電池保護應用中,LM74912-Q1 評估模組可評估 LM74912-Q1 理想二極體控制器的運作及性能。此評估模組示範 LM74912-Q1 如何控制兩個背對背 N 通道電源 MOSFET,以模擬具有電源路徑開/關控制、輸出短路和過電壓防護的理想二極體整流器。

使用指南: PDF | HTML
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模擬型號

LM74912-Q1 PSpice Transient Model

SNOM786.ZIP (118 KB) - PSpice Model
計算工具

LM74912-CALC Design calculator for LM74912-Q1 ideal diode controller

The design calculator allows user to size the external peripheral components while designing with LM74912-Q1 ideal diode controller
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產品
理想二極體/ORing 控制器
LM74912-Q1 具有整合式過電壓與短路保護和故障輸出的車用理想二極體
模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
參考設計

PMP31252 — 適合車用的 150W 雙相同步降壓轉換器參考設計

本設計展示可當成雙輸出轉換器使用的低 EMI、雙相位降壓轉換器。作為雙相轉換器,此電路可提供 22A 的連續輸出電流和 30A 峰值電流,並具備 12V 至 5V 配置。
Test report: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
VQFN (RGE) 24 Ultra Librarian

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