UCC27211A-Q1
Controlador de puerta de medio puente de 4 A y 120 V con UVLO de 8 V y manipulación de tensión negat
UCC27211A-Q1
- AEC-Q100 Qualified for Automotive Applications: Device Temperature Grade 1
- –40°C to +150°C junction temperature range
- Drives two N-channel MOSFETs in high-side and low-side configuration with independent inputs
- Maximum boot voltage 120V DC
- 3.7A source, 4.5A sink output currents
- Input pins can tolerate –10V to +20V and are independent of supply voltage range
- TTL compatible inputs
- 8V to 17V VDD operating range, (20V ABS MAX)
- 7.2ns rise and 5.5ns fall time with 1000pF load
- Fast propagation delay times (20ns typical)
- 4ns delay matching
- Symmetrical undervoltage lockout for high-side and low-side driver
- Available in the industry standard SO-PowerPAD SOIC-8 package
The UCC27211A-Q1 device driver is based on the popular UCC27201 MOSFET drivers; but, this device offers several significant performance improvements.
The peak output pullup and pulldown current has been increased to 3.7A source and 4.5A sink and thereby allows for driving large power MOSFETs with minimized switching losses during the transition through the Miller Plateau of the MOSFET. The input structure can directly handle –10VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a 20V maximum rating.
The switching node of the UCC27211A-Q1 (HS pin) can handle –(24 - VDD) V maximum, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance. The UCC27211A-Q1 (TTL inputs) has increased hysteresis that allows for interface to analog or digital PWM controllers with enhanced noise immunity.
The low-side and high-side gate drivers are independently controlled and matched to 4ns between the turn on and turn off of each other. An on-chip 120V rated bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.
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Documentación técnica
Tipo | Título | Fecha | ||
---|---|---|---|---|
* | Data sheet | UCC27211A -Q1 Automotive 120V, 3.7A/4.5A Half-Bridge Driver with 8V UVLO datasheet (Rev. B) | PDF | HTML | 18 jul 2024 |
Functional safety information | UCC27211A-Q1 and UCC27212A-Q1 Functional Safety FIT Rate, FMD and Pin FMA (Rev. A) | PDF | HTML | 03 oct 2024 | |
Application note | Understanding and comparing peak current capability of gate drivers | PDF | HTML | 30 mar 2021 | |
Application brief | External Gate Resistor Selection Guide (Rev. A) | 28 feb 2020 | ||
Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 28 feb 2020 | ||
More literature | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 29 oct 2018 |
Diseño y desarrollo
Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.
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PSPICE-FOR-TI — PSpice® para herramienta de diseño y simulación de TI
Encapsulado | Pines | Símbolos CAD, huellas y modelos 3D |
---|---|---|
HSOIC (DDA) | 8 | Ultra Librarian |
SOIC (D) | 8 | Ultra Librarian |
Pedidos y calidad
- RoHS
- REACH
- Marcado del dispositivo
- Acabado de plomo/material de la bola
- Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
- Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
- Contenido del material
- Resumen de calificaciones
- Monitoreo continuo de confiabilidad
- Lugar de fabricación
- Lugar de ensamblaje
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Soporte y capacitación
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