Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 1.8 Vos (offset voltage at 25°C) (max) (mV) 2 Offset drift (typ) (µV/°C) 0.5 Input bias current (max) (pA) 110 GBW (typ) (MHz) 0.012 Features Cost Optimized, EMI Hardened, Zero Crossover Slew rate (typ) (V/µs) 0.005 Rail-to-rail In, Out Iq per channel (typ) (mA) 0.0008 Vn at 1 kHz (typ) (nV√Hz) 300 CMRR (typ) (dB) 110 Rating Catalog Operating temperature range (°C) -40 to 125 Iout (typ) (A) 0.01 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) 0 Output swing headroom (to negative supply) (typ) (V) 0.025 Output swing headroom (to positive supply) (typ) (V) -0.025
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 1.8 Vos (offset voltage at 25°C) (max) (mV) 2 Offset drift (typ) (µV/°C) 0.5 Input bias current (max) (pA) 110 GBW (typ) (MHz) 0.012 Features Cost Optimized, EMI Hardened, Zero Crossover Slew rate (typ) (V/µs) 0.005 Rail-to-rail In, Out Iq per channel (typ) (mA) 0.0008 Vn at 1 kHz (typ) (nV√Hz) 300 CMRR (typ) (dB) 110 Rating Catalog Operating temperature range (°C) -40 to 125 Iout (typ) (A) 0.01 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) 0 Output swing headroom (to negative supply) (typ) (V) 0.025 Output swing headroom (to positive supply) (typ) (V) -0.025