Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2.2 Vos (offset voltage at 25°C) (max) (mV) 0.025 Offset drift (typ) (µV/°C) 0.32 Input bias current (max) (pA) 10 GBW (typ) (MHz) 5.5 Features EMI Hardened, Small Size, e-Trim™ Slew rate (typ) (V/µs) 2 Rail-to-rail In, Out Iq per channel (typ) (mA) 0.76 Vn at 1 kHz (typ) (nV√Hz) 7.5 CMRR (typ) (dB) 90 Rating Catalog Operating temperature range (°C) -40 to 125 Iout (typ) (A) 0.03 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.1 Input common mode headroom (to positive supply) (typ) (V) 0.1 Output swing headroom (to negative supply) (typ) (V) 0.01 Output swing headroom (to positive supply) (typ) (V) -0.01 THD + N at 1 kHz (typ) (%) 0.00027
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2.2 Vos (offset voltage at 25°C) (max) (mV) 0.025 Offset drift (typ) (µV/°C) 0.32 Input bias current (max) (pA) 10 GBW (typ) (MHz) 5.5 Features EMI Hardened, Small Size, e-Trim™ Slew rate (typ) (V/µs) 2 Rail-to-rail In, Out Iq per channel (typ) (mA) 0.76 Vn at 1 kHz (typ) (nV√Hz) 7.5 CMRR (typ) (dB) 90 Rating Catalog Operating temperature range (°C) -40 to 125 Iout (typ) (A) 0.03 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.1 Input common mode headroom (to positive supply) (typ) (V) 0.1 Output swing headroom (to negative supply) (typ) (V) 0.01 Output swing headroom (to positive supply) (typ) (V) -0.01 THD + N at 1 kHz (typ) (%) 0.00027