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Fusibles electrónicos y controladores de intercambio en caliente

LM9061-Q1

ACTIVO

Controlador de protección de lado alto de 7 V a 26 V para automoción

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LM9061-Q1

ACTIVO
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Detalles del producto

FET External Vin (min) (V) 7 Vin (max) (V) 26 Vabsmax_cont (V) 60 Current limit (min) (A) 0.01 Current limit (max) (A) 500 Overcurrent response Circuit breaker, current limiting Fault response Latch-off Soft start Adjustable Overvoltage response Cut-off Rating Automotive Device type eFuses and hot swap controllers Operating temperature range (°C) -40 to 125 Function Inductive load compatibility, Overvoltage protection Quiescent current (Iq) (typ) (A) 0.005 Quiescent current (Iq) (max) (A) 0.005
FET External Vin (min) (V) 7 Vin (max) (V) 26 Vabsmax_cont (V) 60 Current limit (min) (A) 0.01 Current limit (max) (A) 500 Overcurrent response Circuit breaker, current limiting Fault response Latch-off Soft start Adjustable Overvoltage response Cut-off Rating Automotive Device type eFuses and hot swap controllers Operating temperature range (°C) -40 to 125 Function Inductive load compatibility, Overvoltage protection Quiescent current (Iq) (typ) (A) 0.005 Quiescent current (Iq) (max) (A) 0.005
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Withstands 60-V Supply Transients
  • Overvoltage Shut-OFF With VCC > 30 V
  • Lossless Overcurrent Protection Latch-OFF
    • Current Sense Resistor is Not Required
    • Minimizes Power Loss With High Current Loads
  • Programmable Delay of Protection Latch-OFF
  • Gradual Turnoff to Minimize Inductive Load Transient Voltages
  • CMOS Logic-Compatible ON and OFF Control Input
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Withstands 60-V Supply Transients
  • Overvoltage Shut-OFF With VCC > 30 V
  • Lossless Overcurrent Protection Latch-OFF
    • Current Sense Resistor is Not Required
    • Minimizes Power Loss With High Current Loads
  • Programmable Delay of Protection Latch-OFF
  • Gradual Turnoff to Minimize Inductive Load Transient Voltages
  • CMOS Logic-Compatible ON and OFF Control Input

The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCC supply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.

Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the VDS voltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.

The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCC supply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.

Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the VDS voltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.
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* Data sheet LM9061 and LM9061-Q1 High-Side Protection Controller datasheet (Rev. I) PDF | HTML 04 ene 2017
E-book 11 Ways to Protect Your Power Path 03 jul 2019
EVM User's guide LM9061 High-Side Protection Controller EVM 07 nov 2014

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Placa de evaluación

LM9061EVM — Módulo de evaluación LM9061EVM de controlador de protección de lado alto

The LM9061EVM evaluation module demonstrates high-side protection to a connected load from over-current and over-voltage conditions.  An ON/OFF input controls the gate drive to a high-side MOSFET. Over-current protection is performed by monitoring the voltage drop (VDS) across the MOSFET, which is (...)

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