LMG2100R026
- Integrated half-bridge GaN FETs and driver
- 93V continuous, 100V pulsed voltage rating
- Package optimized for easy PCB layout
- High slew rate switching with low ringing
- 5V external bias power supply
- Supports 3.3V and 5V input logic levels
- Gate driver capable of up to 10MHz switching
- Excellent propagation delay (33ns typical) and matching (2ns typical)
- Internal bootstrap supply voltage clamping to prevent GaN FET Overdrive
- Supply rail undervoltage for lockout protection
- Low power consumption
- Exposed top QFN package for top-side cooling
- Large GND pad for bottom-side cooling
The LMG2100R026 device is a 93V continuous, 100V pulsed, 53A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.
GaN FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. The driver and the two GaN FETs are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG2100R026 device is available in a 7.0mm × 4.5mm × 0.89mm lead-free package and can be easily mounted on PCBs.
The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.
The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.
기술 자료
유형 | 직함 | 날짜 | ||
---|---|---|---|---|
* | Data sheet | LMG2100R026 100V, 53A GaN Half-Bridge Power Stage datasheet | PDF | HTML | 2024/07/12 |
EVM User's guide | LMG2100R026 Evaluation Module Users Guide | PDF | HTML | 2024/08/06 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
LMG2100EVM-097 — LMG2100R026 평가 모듈
LMG2100 평가 보드는 하프 브리지를 사용하여 벅 컨버터, 부스트 컨버터 또는 기타 컨버터 토폴로지로 구성할 수 있는 사용이 편리한 전력계입니다. 이 EVM은 통합 드라이버를 갖춘 LMG2100R026 장치 GaN FET를 제공합니다.
패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
---|---|---|
UNKNOWN (VBN) | 16 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치