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氮化鎵 (GaN) 功率級

LMG3522R050

現行

具有整合式驅動器、防護和溫度報告功能的 650-V 50-mΩ GaN FET

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產品規格表

LMG3522R050

現行
產品規格表 立即訂購

產品詳細資料

VDS (max) (V) 650 RDS(on) (mΩ) 50 ID (max) (A) 44 Features Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting, Top-side cooled Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 650 RDS(on) (mΩ) 50 ID (max) (A) 44 Features Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting, Top-side cooled Rating Catalog Operating temperature range (°C) -40 to 125
VQFN (RQS) 52 144 mm² 12 x 12
  • 650V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200V/ns FET hold-off
    • 3.6MHz switching frequency
    • 15V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5V to 18V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • LMG3526R050 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
  • Top-side cooled 12mm × 12mm VQFN package separates electrical and thermal paths for lowest power loop inductance
  • 650V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200V/ns FET hold-off
    • 3.6MHz switching frequency
    • 15V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5V to 18V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • LMG3526R050 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
  • Top-side cooled 12mm × 12mm VQFN package separates electrical and thermal paths for lowest power loop inductance

The LMG352xR050 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG352xR050 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 15V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3526R050 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.

The LMG352xR050 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG352xR050 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 15V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3526R050 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.

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類型 標題 日期
* Data sheet LMG352xR050 650 V 50 mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. A) PDF | HTML 2024年 5月 23日

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

LMG342X-BB-EVM — LMG342x 評估模組

LMG342X-BB-EVM 是一款易於使用的分接板，可當作同步降壓轉換器配置任何 LMG342xR0x0 半橋電路板，例如 LMG3422EVM-043。透過提供功率級、偏壓電源和邏輯電路，此評估模組 (EVM) 可快速測量氮化鎵 (GaN) 裝置切換。此 EVM 能夠提供高達 12A 的輸出電流，運用適當的溫度管理 (強制空氣、低頻運作等)，確保不超過最高操作溫度。EVM 屬於開迴路電路板，不適合執行瞬態量測。

只需要單脈衝寬度調變輸入，具有互補脈衝寬度調變訊號，和板上產生的對應失效時間。使用具有短接地彈簧的示波器探針，提供探針點來測量主要邏輯和功率級波形。

使用指南: PDF | HTML
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子卡

LMG3522EVM-042 — 配備整合式驅動器子卡的 LMG3522R030-Q1 車用 650-V 30-mΩ GaN FET

LMG3522EVM-042 可配置半橋中兩個 LMG3522R030 GaN FET，並具備逐週期過電流防護、鎖存短路防護功能和所有必要輔助周邊電路。此 EVM 設計旨在與較大的系統配合使用。

使用指南: PDF
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計算工具

LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator

Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
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LMG2100R026 — 100V 2.6mΩ 半橋氮化鎵 (GaN) 功率級 LMG2100R044 — 具有整合式驅動器和防護功能的 100-V 4.4-mΩ 半橋 GaN FET LMG2610 — 具有整合式驅動器、保護和電流感測功能且適用於 ACF 的 650-V 170/248-mΩ GaN 半橋 LMG2640 — 具有整合式驅動器、防護和電流感測的 650V 105mΩ GaN 半橋 LMG2650 — 具有整合式驅動器、防護和電流感測的 650V 95mΩ GaN 半橋 LMG3410R050 — 具有整合式驅動器和保護功能的 600-V 50-mΩ GaN LMG3410R070 — 具有整合式驅動器和防護的 600V 70mΩ GaN LMG3410R150 — 具有整合驅動器和過電流保護功能的 600-V 150-mΩ GaN LMG3411R050 — 具有整合驅動器和逐週期過電流保護功能的 600V 50mΩ GaN LMG3411R070 — 具有整合驅動器和逐週期過電流保護功能的 600-V 70-mΩ GaN LMG3411R150 — 具有整合驅動器和逐週期過電流保護功能的 600-V 150-mΩ GaN LMG3422R030 — 具有整合式驅動器、防護和溫度報告功能的 600-V 30-mΩ GaN FET LMG3422R050 — 具有整合式驅動器、防護和溫度報告功能的 600-V 50-mΩ GaN FET LMG3425R030 — 具有整合式驅動器、保護、溫度報告和理想二極體模式的 600-V 30-mΩ GaN FET LMG3425R050 — 具有整合式驅動器、保護、溫度報告和理想二極體模式的 600-V 50-mΩ GaN FET LMG3426R030 — 具有整合式驅動器、防護和零電壓偵測的 600V 30mΩ GaN FET LMG3426R050 — 具有整合式驅動器、防護和零電壓偵測的 600V 50mΩ GaN FET LMG3427R030 — 具有整合式驅動器、防護和零電流偵測的 600V 30mΩ GaN FET LMG3522R030 — 具有整合式驅動器、防護和溫度報告功能的 650-V 30-mΩ GaN FET LMG3522R030-Q1 — 具有整合式驅動器、防護和溫度報告功能的車用 650-V、30-mΩ GaN FET LMG3522R050 — 具有整合式驅動器、防護和溫度報告功能的 650-V 50-mΩ GaN FET LMG3526R030 — 具有整合式驅動器、防護和零電壓偵測的 650-V 30-mΩ GaN FET LMG3526R050 — 具有整合式驅動器、防護和零電壓偵測報告的 650-V 50-mΩ GaN FET LMG5200 — 80V GaN 半橋功率級
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參考設計

TIDA-010933 — GaN 型 1.6kW、雙向微型逆變器參考設計

此參考設計展示了一款具有儲能功能的四輸入雙向 1.6kW GaN 型微型逆變器。
Design guide: PDF
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VQFN (RQS) 52 Ultra Librarian
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  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
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  • 組裝地點

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