LMG5200
- Integrated 15-mΩ GaN FETs and Driver
- 80-V Continuous, 100-V Pulsed Voltage Rating
- Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements
- Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Causing Excessive Ringing in Hard-Switched Topologies
- Ideal for Isolated and Non-Isolated Applications
- Gate Driver Capable of Up to 10 MHz Switching
- Internal Bootstrap Supply Voltage Clamping to Prevent GaN FET Overdrive
- Supply Rail Undervoltage Lockout Protection
- Excellent Propagation Delay (29.5 ns Typical) and Matching (2 ns Typical)
- Low Power Consumption
The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.
GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG5200 device is available in a 6 mm × 8 mm × 2 mm lead-free package and can be easily mounted on PCBs.
The TTL logic compatible inputs can withstand input voltages up to 12 V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.
The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor. When used with the TPS53632G controller, the LMG5200 enables direct conversion from 48-V to point-of-load voltages (0.5-1.5 V).
技術文件
設計與開發
如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。
LMG5200EVM-02 — LMG5200 GaN 功率級評估模組
LMG5200POLEVM-10 — LMG5200 GaN 48V 至 1V 負載點評估模組
LMG5200POLEVM-10 EVM 設計旨在評估 48V 至 1V 應用中的 LMG5200 GaN 功率級和 TPS53632G 半橋負載點控制器。此 EVM 採用 48V-1V 轉換器作為單級硬切換半橋式電流倍增器整流器。EVM 支援 36 至 75 伏特輸入電壓,以及最多 50 A 輸出電流;此拓撲可有效率地支援高降壓比率,同時提供顯著的輸出電流與可控制性。
BOOSTXL-3PHGANINV — 具有基於分流的直列式馬達相電流感測的 48V 三相逆變器評估模組
The BOOSTXL-3PHGANINV evaluation module features a 48-V/10-A three-phase GaN inverter with precision in-line shunt-based phase current sensing for accurate control of precision drives such as servo drives.
MathWorks MATLAB & Simulink example models include the following:
LMG5200 TINA-TI Transient Reference Design (Rev. C)
TIDA-00909 — 適用於高速驅動應用的 48V/10A 高頻 PWM 三相 GaN 逆變器參考設計
TIDA-00913 — 具有基於分流直列式馬達相電流感測功能的 48V 三相逆變器參考設計
TIDM-02006 — 透過快速序列介面 (FSI) 參考設計的分散式多軸伺服驅動
TIDM-02007 — 在單路 MCU 參考設計上使用快速電流迴路 (FCL) 和 SFRA 的雙軸馬達驅動
PMP22089 — 具有 GAN 技術的半橋負載點轉換器參考設計
PMP4486 — 具有 3 路輸出的 48V 輸入電壓數位 POL 參考設計
PMP4497 — LMG5200 48V 轉 1V/40A 單段式轉換器參考設計
封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
QFM (MOF) | 9 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點