LMG5200

現行

80V GaN 半橋功率級

產品詳細資料

VDS (max) (V) 80 RDS(on) (mΩ) 15 ID (max) (A) 10 Features Half-bridge Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 80 RDS(on) (mΩ) 15 ID (max) (A) 10 Features Half-bridge Rating Catalog Operating temperature range (°C) -40 to 125
QFM (MOF) 9 48 mm² 8 x 6
  • Integrated 15-mΩ GaN FETs and Driver
  • 80-V Continuous, 100-V Pulsed Voltage Rating
  • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements
  • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Causing Excessive Ringing in Hard-Switched Topologies
  • Ideal for Isolated and Non-Isolated Applications
  • Gate Driver Capable of Up to 10 MHz Switching
  • Internal Bootstrap Supply Voltage Clamping to Prevent GaN FET Overdrive
  • Supply Rail Undervoltage Lockout Protection
  • Excellent Propagation Delay (29.5 ns Typical) and Matching (2 ns Typical)
  • Low Power Consumption
  • Integrated 15-mΩ GaN FETs and Driver
  • 80-V Continuous, 100-V Pulsed Voltage Rating
  • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements
  • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Causing Excessive Ringing in Hard-Switched Topologies
  • Ideal for Isolated and Non-Isolated Applications
  • Gate Driver Capable of Up to 10 MHz Switching
  • Internal Bootstrap Supply Voltage Clamping to Prevent GaN FET Overdrive
  • Supply Rail Undervoltage Lockout Protection
  • Excellent Propagation Delay (29.5 ns Typical) and Matching (2 ns Typical)
  • Low Power Consumption

The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG5200 device is available in a 6 mm × 8 mm × 2 mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs can withstand input voltages up to 12 V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor. When used with the TPS53632G controller, the LMG5200 enables direct conversion from 48-V to point-of-load voltages (0.5-1.5 V).

The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG5200 device is available in a 6 mm × 8 mm × 2 mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs can withstand input voltages up to 12 V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor. When used with the TPS53632G controller, the LMG5200 enables direct conversion from 48-V to point-of-load voltages (0.5-1.5 V).

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類型 標題 日期
* Data sheet LMG5200 80-V, 10-A GaN Half-Bridge Power Stage datasheet (Rev. E) PDF | HTML 2018年 10月 29日
Selection guide Current Sense Amplifiers (Rev. E) 2021年 9月 20日
E-book E-book: An engineer’s guide to industrial robot designs 2020年 2月 12日
Application note Dual-Axis Motor Control Using FCL and SFRA On a Single C2000™ MCU PDF | HTML 2019年 8月 7日
Technical article Gallium nitride: supporting applications from watts to kilowatts PDF | HTML 2018年 12月 19日
Technical article The sound of GaN PDF | HTML 2018年 6月 26日
EVM User's guide BOOSTXL-3PhGaNInv Evaluation Module User Guide (Rev. A) 2018年 4月 18日
Application note Dual Motor Ctl Using FCL and Perf Analysis Using SFRA on TMS320F28379D LaunchPad (Rev. A) 2018年 3月 20日
Application note Performance Analysis of Fast Current Loop (FCL) in Servo 2018年 3月 6日
Technical article GaN reliability standards reach milestone PDF | HTML 2017年 9月 18日
EVM User's guide Using the LMG5200POLEVM-10A GaN 48V-1V Point-of-Load EVM (Rev. B) 2017年 8月 2日
Technical article The power to innovate industrial design PDF | HTML 2017年 3月 27日
Technical article The power to do even more with GaN PDF | HTML 2017年 3月 25日
White paper Enabling high-voltage power delivery through the power process chain 2017年 3月 23日
EVM User's guide Using the LMG5200EVM-02 GaN Half-Bridge Power Stage EVM 2017年 2月 28日
Technical article Gallium nitride transistors open up new frontiers in high-speed motor drives PDF | HTML 2016年 12月 12日
Technical article Five benefits of enhanced PWM rejection for in-line motor control PDF | HTML 2016年 11月 8日
Technical article What’s next for Industry 4.0? The best new technologies shaping the future of smar PDF | HTML 2016年 11月 7日
Technical article Rethinking server power architecture in a post-silicon world: Getting from 48 Vin PDF | HTML 2016年 8月 1日
Technical article Enabling 48V-to-POL single-stage conversion with GaN PDF | HTML 2016年 7月 5日
Technical article Highlights from APEC 2016 – GaN, 48V POL, wireless charging and more! PDF | HTML 2016年 3月 28日
Technical article Let’s GaN together, reliably PDF | HTML 2016年 3月 22日
Technical article Control a GaN power stage with a Hercules™ LaunchPad™ development kit – part 2 PDF | HTML 2016年 3月 17日
Technical article Control a GaN power stage with a Hercules™ LaunchPad™ development kit – part 1 PDF | HTML 2016年 2月 23日
Technical article GaN to the rescue! Part 2: Measurements PDF | HTML 2016年 1月 7日
Technical article Simulating electromagnetic interference – is it possible? PDF | HTML 2015年 12月 1日
White paper Redefining power management through high-voltage innovation 2015年 11月 12日
Technical article GaN to the rescue! Part 1: Body-diode reverse recovery PDF | HTML 2015年 10月 28日
Application note Layout Guidelines for LMG5200 ~ 80-V, 10-A, GaN Power Stage Module (Rev. A) 2015年 9月 23日
Technical article Control a GaN half-bridge power stage with a single PWM signal PDF | HTML 2015年 9月 10日
Technical article Get into electromagnetic compliance with GaN PDF | HTML 2015年 8月 26日
Technical article Are you accurately measuring the picosecond rise time of your GaN device? PDF | HTML 2015年 7月 1日
White paper A comprehensive methodology to qualify the reliability of GaN products 2015年 3月 2日
White paper GaN power module performance advantage in DC/DC converters 2015年 3月 2日
White paper Advancing Power Supply Solutions Through the Promise of GaN 2015年 2月 24日

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

LMG5200EVM-02 — LMG5200 GaN 功率級評估模組

80-V 10A 功率級 EVM - LMG5200 EVM 電路板是小型且易用的功率級,具外部 PWM 訊號。此 EVM 適用於評估許多不同 DC-DC 轉換器拓撲中的 LMG5200 功率級性能。可用於評估 LMG5200 的性能以測量效率。該模組能提供最大 10A 電流,但應遵循足夠的熱管理 (強制空氣、低頻率運作等),以確保溫度不超標。EVM 屬於開迴路電路板,不適合進行瞬態量測。
使用指南: PDF
TI.com 無法提供
開發板

LMG5200POLEVM-10 — LMG5200 GaN 48V 至 1V 負載點評估模組

LMG5200POLEVM-10 EVM 設計旨在評估 48V 至 1V 應用中的 LMG5200 GaN 功率級和 TPS53632G 半橋負載點控制器。此 EVM 採用 48V-1V 轉換器作為單級硬切換半橋式電流倍增器整流器。EVM 支援 36 至 75 伏特輸入電壓,以及最多 50 A 輸出電流;此拓撲可有效率地支援高降壓比率,同時提供顯著的輸出電流與可控制性。

使用指南: PDF
TI.com 無法提供
子卡

BOOSTXL-3PHGANINV — 具有基於分流的直列式馬達相電流感測的 48V 三相逆變器評估模組

The BOOSTXL-3PHGANINV evaluation module features a 48-V/10-A three-phase GaN inverter with precision in-line shunt-based phase current sensing for accurate control of precision drives such as servo drives.
 

MathWorks MATLAB & Simulink example models include the following:

使用指南: PDF
TI.com 無法提供
模擬型號

LMG5200 PSpice Transient Model (Rev. A)

SNVM711A.ZIP (52 KB) - PSpice Model
模擬型號

LMG5200 PSpice Transient Model (Rev. C)

SNVM711C.ZIP (54 KB) - PSpice Model
模擬型號

LMG5200 TINA-TI Transient Reference Design (Rev. C)

SNOM478C.TSC (58 KB) - TINA-TI Reference Design
模擬型號

LMG5200 TINA-TI Transient Spice Model

SNOM477.ZIP (23 KB) - TINA-TI Spice Model
模擬型號

LMG5200 Unencrypted Spice Transient Model

SNOJ012.ZIP (3 KB) - Spice Model
計算工具

LMGXX-GAN-LLC-CALC GaN LLC resonant converter device loss calculator

Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
支援產品和硬體

支援產品和硬體

產品
氮化鎵 (GaN) 功率級
LMG2100R044 具有整合式驅動器和防護功能的 100-V 4.4-mΩ 半橋 GaN FET LMG2610 具有整合式驅動器、保護和電流感測功能且適用於 ACF 的 650-V 170/248-mΩ GaN 半橋 LMG2650 具有整合式驅動器、防護和電流感測的 650V 95mΩ GaN 半橋 LMG3410R050 具有整合式驅動器和保護功能的 600V 50mΩ GaN LMG3410R070 具有整合式驅動器和防護的 600V 70mΩ GaN LMG3410R150 具有整合驅動器和過電流保護功能的 600-V 150-mΩ GaN LMG3411R050 具有整合驅動器和逐週期過電流保護功能的 600V 50mΩ GaN LMG3411R070 具有整合驅動器和逐週期過電流保護功能的 600-V 70-mΩ GaN LMG3411R150 具有整合驅動器和逐週期過電流保護功能的 600-V 150-mΩ GaN LMG3422R030 具有整合式驅動器、防護和溫度報告功能的 600-V 30-mΩ GaN FET LMG3422R050 具有整合式驅動器、防護和溫度報告功能的 600-V 50-mΩ GaN FET LMG3425R030 具有整合式驅動器、保護、溫度報告和理想二極體模式的 600-V 30-mΩ GaN FET LMG3425R050 具有整合式驅動器、保護、溫度報告和理想二極體模式的 600-V 50-mΩ GaN FET LMG3426R030 具有整合式驅動器、防護和零電壓偵測的 600V 30mΩ GaN FET LMG3426R050 具有整合式驅動器、防護和零電壓偵測的 600V 50mΩ GaN FET LMG3522R030 具有整合式驅動器、防護和溫度報告功能的 650-V 30-mΩ GaN FET LMG3522R030-Q1 具有整合式驅動器、防護和溫度報告功能的車用 650-V、30-mΩ GaN FET LMG3522R050 具有整合式驅動器、防護和溫度報告功能的 650-V 50-mΩ GaN FET LMG3526R030 具有整合式驅動器、防護和零電壓偵測的 650-V 30-mΩ GaN FET LMG3526R050 具有整合式驅動器、防護和零電壓偵測報告的 650-V 50-mΩ GaN FET LMG5200 80V GaN 半橋功率級
PCB 佈局

LMG5200POLEVM PCB Design File

SNOR024.ZIP (1553 KB)
配置圖

LMG5200 Power Stage Design Files

SNOR011.ZIP (4042 KB)
參考設計

TIDA-00909 — 適用於高速驅動應用的 48V/10A 高頻 PWM 三相 GaN 逆變器參考設計

Low voltage, high-speed drives and/or low inductance brushless motors require higher inverter switching frequencies in the range of 40 kHz to 100 kHz to minimize losses and torque ripple in the motor. The TIDA-00909 reference design achieves that by using a 3-phase inverter with three 80V/10A (...)
Design guide: PDF
電路圖: PDF
參考設計

TIDA-00913 — 具有基於分流直列式馬達相電流感測功能的 48V 三相逆變器參考設計

The TIDA-00913 reference design realizes a 48V/10A 3-phase GaN inverter with precision in-line shunt-based phase current sensing for accurate control of precision drives such as servo drives. One of the largest challenges with in-line shunt-based phase current sensing is the high common-mode (...)
Design guide: PDF
電路圖: PDF
參考設計

TIDM-02006 — 透過快速序列介面 (FSI) 參考設計的分散式多軸伺服驅動

This reference design presents an example distributed or decentralized multi-axis servo drive over Fast Serial Interface (FSI) using C2000™ real-time controllers. Multi-axis servo drives are used in many applications such as factory automation and robots. The cost per axis, performance and (...)
Design guide: PDF
電路圖: PDF
參考設計

TIDM-02007 — 在單路 MCU 參考設計上使用快速電流迴路 (FCL) 和 SFRA 的雙軸馬達驅動

This reference design presents a dual-axis motor drive using fast current loop (FCL) and software frequency response analyzer (SFRA) technologies on a single C2000 controller. The FCL utilizes dual core (CPU, CLA) parallel processing techniques to achieve a substantial improvement in control (...)
Design guide: PDF
電路圖: PDF
參考設計

PMP22089 — 具有 GAN 技術的半橋負載點轉換器參考設計

This reference design modifies the inboard transformer turns ratio from 5:1 to 3:1 to reduce input the range. The board supports input voltages from 24 V to 32 V and output voltages between 0.5 V to 1.0 V with output currents up to 40 A. This topology efficiently supports the high step-down ratio (...)
Test report: PDF
電路圖: PDF
參考設計

PMP4486 — 具有 3 路輸出的 48V 輸入電壓數位 POL 參考設計

The PMP4486 is a GaN-based reference design solution for telecom and computing applications. The GaN module LMG5200 enables a high efficiency single stage conversion with an input range from 36 to 60V down to 29V, 12V and 1.0V. This design shows the benefits of a GaN based design with high (...)
Test report: PDF
電路圖: PDF
參考設計

PMP4497 — LMG5200 48V 轉 1V/40A 單段式轉換器參考設計

The PMP4497 is a GaN-based reference design solution for the Vcore such as FPGA, ASIC applications. With high integration and low switching loss, the GaN module LMG5200 enables a high efficiency single stage from 48V to 1.0V solution to replace the traditional 2-stage solution. This design shows (...)
Test report: PDF
電路圖: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
QFM (MOF) 9 Ultra Librarian

訂購與品質

內含資訊:
  • RoHS
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  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
內含資訊:
  • 晶圓廠位置
  • 組裝地點

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