LMG3422R030
- Qualified for JEDEC JEP180 for hard-switching topologies
- 600V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200V/ns FET hold-off
- 2.2MHz switching frequency
- 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
- Operates from 7.5V to 18V supply
- Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
- Withstands 720V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM output
- LMG3426R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TIs low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.
Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.
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LMG342X-BB-EVM — LMG342x 評估模組
LMG342X-BB-EVM 是一款易於使用的分接板,可當作同步降壓轉換器配置任何 LMG342xR0x0 半橋電路板,例如 LMG3422EVM-043。透過提供功率級、偏壓電源和邏輯電路,此評估模組 (EVM) 可快速測量氮化鎵 (GaN) 裝置切換。此 EVM 能夠提供高達 12A 的輸出電流,運用適當的溫度管理 (強制空氣、低頻運作等),確保不超過最高操作溫度。EVM 屬於開迴路電路板,不適合執行瞬態量測。
只需要單脈衝寬度調變輸入,具有互補脈衝寬度調變訊號,和板上產生的對應失效時間。使用具有短接地彈簧的示波器探針,提供探針點來測量主要邏輯和功率級波形。
LMG3422EVM-043 — LMG3422R030 600-V 30-mΩ 半橋子板
LMG3422R0x0 LMG3425R0x0 LMG3522R030 and LMG3522R030-Q1 PLECS Simulation Model
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封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
VQFN (RQZ) | 54 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點