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UCC27212A-Q1

AKTIV

4-A-, 120-V-Halbbrücken-Gate-Treiber mit 5-V-UVLO, für Fahrzeuganwendungen

Eine neuere Version dieses Produkts ist verfügbar

Selbe Funktionalität wie der verglichene Baustein bei gleicher Anschlussbelegung
UCC27282-Q1 AKTIV Halbbrückentreiber für die Automobilindustrie, 3 A, 120 V, mit 5-V-UVLO, Verriegelung und Aktivierun This is a newer half-bridge driver with cross conduction protection

Produktdetails

Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 5 Input supply voltage (max) (V) 17 Peak output current (A) 4 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 5 Rating Automotive Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 TI functional safety category Functional Safety-Capable Driver configuration Dual inputs
Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 5 Input supply voltage (max) (V) 17 Peak output current (A) 4 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 5 Rating Automotive Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 TI functional safety category Functional Safety-Capable Driver configuration Dual inputs
HSOIC (DDA) 8 29.4 mm² 4.9 x 6
  • AEC-Q100 qualified for automotive applications: device temperature grade 1
  • –40°C to +150°C junction temperature range
  • 5V turn-off Under Voltage Lockout (UVLO)
  • Drives two N-channel MOSFETs in high-side and low-side configuration with independent inputs
  • Maximum boot voltage 120V DC
  • 3.7A source, 4.5A sink output currents
  • Input pins can tolerate –10V to +20V and are independent of supply voltage range
  • TTL compatible Inputs
  • 7V to 17V VDD operating range, (20V ABS maximum)
  • 7.2ns rise and 5.5ns fall time with 1000pF load
  • Fast propagation delay times (20ns typical)
  • 4ns typical delay matching
  • Available in the SOIC8 (PowerPAD) package
  • AEC-Q100 qualified for automotive applications: device temperature grade 1
  • –40°C to +150°C junction temperature range
  • 5V turn-off Under Voltage Lockout (UVLO)
  • Drives two N-channel MOSFETs in high-side and low-side configuration with independent inputs
  • Maximum boot voltage 120V DC
  • 3.7A source, 4.5A sink output currents
  • Input pins can tolerate –10V to +20V and are independent of supply voltage range
  • TTL compatible Inputs
  • 7V to 17V VDD operating range, (20V ABS maximum)
  • 7.2ns rise and 5.5ns fall time with 1000pF load
  • Fast propagation delay times (20ns typical)
  • 4ns typical delay matching
  • Available in the SOIC8 (PowerPAD) package

The UCC27212A-Q1 device driver is based on the popular UCC27211 MOSFET drivers. In addition, UCC27212A-Q1 offers extended operating range all the way down to 5V which helps lower power losses.

The peak output pullup and pulldown current is 3.7A source and 4.5A sink. This allows for the ability to drive large power MOSFETs with minimized switching losses during the e Miller Plateau of the MOSFET.

The input structure can directly handle –10V, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a 20V maximum rating.

The switching node of the UCC27212A-Q1 (HS pin) can handle –(24V – VDD) maximum, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance. The UCC27212A-Q1 has increased hysteresis that allows for interface to analog or digital PWM controllers with enhanced noise immunity. The low-side and high-side gate drivers are independently controlled and matched to ns between the turn on and turn off of each other. An on-chip 120V rated bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low drive voltage is below the specified threshold.

The UCC27212A-Q1 device driver is based on the popular UCC27211 MOSFET drivers. In addition, UCC27212A-Q1 offers extended operating range all the way down to 5V which helps lower power losses.

The peak output pullup and pulldown current is 3.7A source and 4.5A sink. This allows for the ability to drive large power MOSFETs with minimized switching losses during the e Miller Plateau of the MOSFET.

The input structure can directly handle –10V, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a 20V maximum rating.

The switching node of the UCC27212A-Q1 (HS pin) can handle –(24V – VDD) maximum, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance. The UCC27212A-Q1 has increased hysteresis that allows for interface to analog or digital PWM controllers with enhanced noise immunity. The low-side and high-side gate drivers are independently controlled and matched to ns between the turn on and turn off of each other. An on-chip 120V rated bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low drive voltage is below the specified threshold.

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Technische Dokumentation

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Typ Titel Datum
* Data sheet UCC27212A-Q1 Automotive 120V, 3.7A/4.5A Half-Bridge Driver with 5V UVLO datasheet (Rev. A) PDF | HTML 17 Jul 2024
Functional safety information UCC27211A-Q1 and UCC27212A-Q1 Functional Safety FIT Rate, FMD and Pin FMA (Rev. A) PDF | HTML 03 Okt 2024
Application note Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 25 Mär 2024
Application note Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 24 Jan 2024
Application note Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 08 Sep 2023
Application note Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 07 Apr 2021
Application note Understanding and comparing peak current capability of gate drivers PDF | HTML 30 Mär 2021
Application note Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 12 Mai 2020
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 22 Okt 2019
Application note Maximizing DC/DC converter designs with UCC27282 18 Jan 2019
Application note UCC27282 Improving motor drive system robustness 11 Jan 2019
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 Okt 2018
Application note PFC Design Choice for On Board Charger Designs 24 Mai 2018
Application brief Reducing Switching Losses in On-Board Chargers for Electric Vehicles 27 Mär 2018

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Evaluierungsplatine

UCC27212EVM-328 — UCC27212 Evaluierungsmodul mit Leistungsstufe

UCC272XXEVM-328 is designed for evaluating UCC27212DPR, which is a half bridge gate driver with 3.7-A source and 4.5-A sink peak current capability. This EVM could be served to evaluate the driver IC against its datsheet. The EVM can also be used as Driver IC component selection guide.

Benutzerhandbuch: PDF
Simulationsmodell

UCC27212 PSpice Transient Model

SLUM588.ZIP (39 KB) - PSpice Model
Simulationsmodell

UCC27212 Unencrypted PSpice Transient Model

SLUM587.ZIP (1 KB) - PSpice Model
Berechnungstool

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Bestellen & Qualität

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  • Materialinhalt
  • Qualifikationszusammenfassung
  • Kontinuierliches Zuverlässigkeitsmonitoring
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